Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
48
62.5
74
110
R
JL
35
40
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
20
Gate-Source Voltage
Drain-Source Voltage
-30
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
-4.2
-20
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
2
1.4
-55 to 150
T
A
=70C
I
D
-5
AO4803
Dual P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -5 A (V
GS
= -10V)
R
DS(ON)
< 52m
(V
GS
= -10V)
R
DS(ON)
< 87m
(V
GS
= -4.5V)
General Description
The AO4803 uses advanced trench technology to
provide excellent R
DS(ON)
with
low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO4803 is Pb-free
(meets ROHS & Sony 259 specifications). AO4803L
is a Green Product ordering option. AO4803 and
AO4803L are electrically identical.
SOIC-8
Top View
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
AO4803
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1
-1.8
-3
V
I
D(ON)
-20
A
39
52
T
J
=125C
54
70
67
87
m
g
FS
6
8.6
S
V
SD
-0.77
-1
V
I
S
-2.8
A
C
iss
700
pF
C
oss
120
pF
C
rss
75
pF
R
g
10
Q
g
(10V)
14.7
nC
Q
g
(4.5V)
7.6
nC
Q
gs
2
nC
Q
gd
3.8
nC
t
D(on)
8.3
ns
t
r
5
ns
t
D(off)
29
ns
t
f
14
ns
t
rr
23.5
ns
Q
rr
13.4
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=-15V, f=1MHz
Input Capacitance
Output Capacitance
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=3
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-15V, I
D
=-5A
m
V
GS
=-4.5V, I
D
=-4A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-5A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-5A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=5.0A
Reverse Transfer Capacitance
I
F
=-5A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev5: August 2005
Alpha & Omega Semiconductor, Ltd.
AO4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
0.00
1.00
2.00
3.00
4.00
5.00
-V
DS
(Volts)
Figure 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-3V
-3.5V
-4V
-10V
-4.5V
-5V
0
2
4
6
8
10
0
1
2
3
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
25C
125C
V
DS
=-5V
20
40
60
80
100
1
3
5
7
9
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
V
GS
=-4.5V
V
GS
=-10V
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
8.00E-01
1.00E+00
1.20E+00
1.40E+00
1.60E+00
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
aliz
ed
On
-R
esistan
ce
V
GS
=-10V
V
GS
=-4.5V
20
40
60
80
100
120
140
160
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
I
D
=-5A
25C
125C
I
D
=-5A
-2.5V
-6V
Alpha & Omega Semiconductor, Ltd.
AO4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
ol
ts)
0
200
400
600
800
1000
1200
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
C
oss
C
rss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
0.1
1
10
100
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=-15V
I
D
=-5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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