Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
64
83
89
120
R
JL
53
70
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
12
Gate-Source Voltage
Drain-Source Voltage
30
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
6
30
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
1.5
1
-55 to 150
T
A
=70C
I
D
8
AO4832
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 8 A (V
GS
= 10V)
R
DS(ON)
< 15m
(V
GS
= 10V)
R
DS(ON)
< 17m
(V
GS
= 4.5)
R
DS(ON)
< 23m
(V
GS
= 2.5V)
General Description
The AO4832 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
Standard Product
AO4832 is Pb-free (meets ROHS & Sony 259
specifications). AO4832L is a Green Product ordering
option. AO4832 and AO4832L are electrically identical.
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
AO8816
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
n
V
GS(th)
0.6
1
1.4
V
I
D(ON)
30
A
12.2
15
T
J
=125C
17
21
13
17
m
17.6
23
m
g
FS
23
S
V
SD
0.73
1
V
I
S
2.5
A
C
iss
1130
pF
C
oss
170
pF
C
rss
125
pF
R
g
1.5
Q
g
14
nC
Q
gs
1.65
nC
Q
gd
5.5
nC
t
D(on)
5.7
ns
t
r
4.8
ns
t
D(off)
36
ns
t
f
7
ns
t
rr
23
ns
Q
rr
16
nC
20
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=15V, f=1MHz
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=5V, V
DS
=15V, R
L
=1.8
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=15V, I
D
=8A
Gate Source Charge
m
V
GS
=4.5V, I
D
=5A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=8A
V
GS
=2.5V, I
D
=4A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
V
DS
=0V, V
GS
=12V
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=8A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=8A
Reverse Transfer Capacitance
I
F
=8A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
AO8816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.73
0
10
20
30
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
I
D
(A
)
V
GS
=1.5V
V
GS
=2V
3V
10V
5V
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
25C
125C
V
GS
=5V
10
12
14
16
18
20
0
5
10
15
20
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
aliz
e ON
-R
esistan
ce
V
GS
=4.5V
I
D
=5A
V
GS
=2.5V
I
D
=4A
V
GS
=10V
I
D
=8A
10
15
20
25
30
35
40
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
I
D
=8A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO8816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.73
0
1
2
3
4
5
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
t
s)
V
DS
=15V
I
D
=8A
0
400
800
1200
1600
2000
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
C
rss
C
oss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
T
J(Max)
=150C
T
A
=25C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
T
on
T
P
D
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=83C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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