Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
48
62.5
74
110
R
JL
35
50
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t 10s
Maximum Junction-to-Ambient
A
Steady-State
Junction and Storage Temperature Range
Continuous Drain
Current
A
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Drain-Source Voltage
Units
V
Max
40
20
T
A
=70C
T
A
=25C
P
D
6
5
Gate-Source Voltage
2
1.28
Thermal Characteristics
Power Dissipation
T
A
=25C
I
D
T
A
=70C
Pulsed Drain Current
B
-55 to 150
V
A
W
C
C/W
20
Units
C/W
C/W
R
JA
AO4840
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 40V
I
D
= 6A (V
GS
=10V)
R
DS(ON)
< 31m (V
GS
=10V)
R
DS(ON)
< 45m (V
GS
=4.5V)
General Description
The AO4840 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. This dual device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4840 is Pb-free (meets ROHS & Sony 259
specifications). AO4840L is a Green Product
ordering option. AO4840 and AO4840L are
electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
D1
G2
D2
S2
G1
S1
Alpha & Omega Semiconductor, Ltd.
AO4840
Symbol
Min
Typ
Max
Units
BV
DSS
40
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
2.3
3
V
I
D(ON)
20
A
25
31
T
J
=125C
36
48
35
45
m
g
FS
22
S
V
SD
0.75
1
V
I
S
3
A
C
iss
404
pF
C
oss
95
pF
C
rss
37
pF
R
g
2.7
Q
g
(10V)
8.3
nC
Q
g
(4.5V)
4.2
nC
Q
gs
1.3
nC
Q
gd
2.3
nC
t
D(on)
4.2
ns
t
r
3.3
ns
t
D(off)
15.6
ns
t
f
3
ns
t
rr
20.5
ns
Q
rr
14.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Body Diode Reverse Recovery Charge
Total Gate Charge
I
F
=6A, dI/dt=100A/s
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=6A, dI/dt=100A/s
Input Capacitance
Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=10mA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=32V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
= 20V
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250A
On state drain current
V
GS
=10V, V
DS
=5V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
m
V
GS
=4.5V, I
D
=5A
V
DS
=5V, I
D
=6A
I
S
=1A,V
GS
=0V
V
GS
=10V, I
D
=6A
Diode Forward Voltage
V
GS
=10V, V
DS
=20V, R
L
=3.3,
R
GEN
=3
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Total Gate Charge
V
GS
=10V, V
DS
=20V, I
D
=6A
V
GS
=0V, V
DS
=20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
Gate resistance
Output Capacitance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
Rev 0 : February 2006
Alpha & Omega Semiconductor, Ltd.
AO4840
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(
A
)
V
GS
=3.5V
4V
10V
5V
4.5V
0
5
10
15
20
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(
A
)
20
30
40
50
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
S
(O
N
)
(
m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(
A
)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
l
i
z
e
d
O
n
-
R
e
s
i
s
t
a
n
c
e
V
GS
=10V
I
D
=6A
V
GS
=4.5V
I
D
=5A
10
20
30
40
50
60
70
80
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
S
(O
N
)
(
m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=6A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO4840
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
2
4
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
G
S
(
V
o
l
t
s
)
0
200
400
600
800
0
10
20
30
40
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
o
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
J
A
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(
A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100s
10ms
1ms
0.1s
1s
10s
DC
T
J(Max)
=150C
T
A
=25C
R
DS(ON)
limited
V
DS
=30V
I
D
= 6A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10s
Alpha & Omega Semiconductor, Ltd.
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