Symbol
Units
V
DS
V
V
GS
V
T
A
=25C
T
A
=70C
I
DM
V
KA
V
T
A
=25C
T
A
=70C
I
FM
T
A
=25C
T
A
=70C
T
J
, T
STG
C
Symbol
Units
R
JL
R
JL
Maximum Junction-to-Lead
C
Steady-State
Pulsed Forward Current
B
71
32
47.5
R
JA
62.5
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
Steady-State
110
110
Maximum Junction-to-Lead
C
Steady-State
35
-55 to 150
Typ
Maximum Junction-to-Ambient
A
Steady-State
Continuous Forward Current
A
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
A
t 10s
Parameter
-55 to 150
A
Absolute Maximum Ratings T
A
=25C unless otherwise noted
P
D
I
D
3
A
2
40
Continuous Drain Current
A
Gate-Source Voltage
Schottky
Drain-Source Voltage
I
F
40
Thermal Characteristics Schottky
62.5
40
48
74
Max
C/W
C/W
MOSFET
30
12
6.9
5.8
40
2
Pulsed Drain Current
B
Junction and Storage Temperature Range
2
W
Schottky reverse voltage
30
1.44
1.44
Power Dissipation
AO4902
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 27m
(V
GS
= 10V)
R
DS(ON)
< 32m
(V
GS
= 4.5V)
R
DS(ON)
< 50m
(V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
General Description
The AO4902 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. The two identical
MOSFETs are co-packaged in parallel with a Schottky
diode, making them ideal for many bridge and totem pole
applications, for e.g. DDR memory.
Standard Product
AO4902 is Pb-free (meets ROHS & Sony 259
specifications). AO4902L is a Green Product ordering
option. AO4902 and AO4902L are electrically identical.
SOIC-8
G1
S1/A1
G2
S2/A2
D1/K1
D1/K1
D2/K2
D2/K2
1
2
3
4
8
7
6
5
G1
D1
S1
K1
A1
G2
D2
S2
K2
A2
Alpha & Omega Semiconductor, Ltd.
AO4902
Symbol
Min
Typ
Max Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
0.7
1
1.4
V
I
D(ON)
25
A
22.6
27
T
J
=125C
33
40
27
32
m
42
50
m
g
FS
12
16
S
V
SD
0.71
1
V
I
S
3
A
C
iss
846
1050
pF
C
oss
96
pF
C
rss
67
pF
R
g
1.24
3.6
Q
g
9.6
12
nC
Q
gs
1.65
nC
Q
gd
3
nC
t
D(on)
3.2
4.8
ns
t
r
4.5
6.8
ns
t
D(off)
26.3
40
ns
t
f
4.8
7
ns
t
rr
Body Diode Reverse Recovery time
I
F
=5A, dI/dt=100A/
s
15.5
20
ns
Q
rr
Body Diode Reverse Recovery charge I
F
=5A, dI/dt=100A/
s
7.9
nC
SCHOTTKY PARAMETERS
V
F
0.45
0.5
V
0.007 0.05
3.2
10
12
20
C
T
37
pF
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISI
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Junction Capacitance
V
R
=15V
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Forward Voltage Drop
I
F
=1.0A
I
rm
Maximum reverse leakage current
V
R
=30V
V
R
=30V, T
J
=125C
V
R
=30V, T
J
=150C
Output Capacitance
Reverse Transfer Capacitance
mA
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=15V, I
D
=6.9A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, R
L
=2.2
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
V
DS
=5V, I
D
=5A
Diode Forward Voltage
I
S
=1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=6.9A
m
V
GS
=4.5V, I
D
=6.0A
V
GS
=2.5V, I
D
=5A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
A
Gate-Body leakage current
V
DS
=0V, V
GS
= 12V
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev3: August 2005
Alpha & Omega Semiconductor, Ltd.
AO4902
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=2V
2.5V
3V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
10
20
30
40
50
60
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
125C
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0
50
100
150
200
Temperature (C)
Figure 4: On resistance vs. Junction Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
V
GS
=2.5V
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
60
70
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=5A
25C
I
D
=5A
125C
25C
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO4902
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
250
500
750
1000
1250
1500
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
V
DS
=15V
I
D
=6.9A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
f=1MHz
V
GS
=0V
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
AO4902
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
I
F
(Am
p
s)
0
50
100
150
200
250
0
5
10
15
20
25
30
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
0.001
0.01
0.1
1
10
100
0
25
50
75
100
125
150
175
Temperature (C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
L
eakag
e Cu
r
r
e
n
t
(m
A)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
25
50
75
100
125
150
175
Temperature (C)
V
F
(V
o
l
ts)
Figure 14: Schottky Forward Drop vs. Junction
Temperature
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
f = 1MHz
I
F
=1A
25C
I
F
=3A
V
R
=30V
125C
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.
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