Symbol
Max Q2
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
V
DS
I
FM
T
J
, T
STG
Junction and Storage Temperature Range
Power Dissipation
A
W
1.28
-55 to 150
C
2
T
A
=70C
Pulsed Diode Forward Current
B
Continuous Forward
Current
A
P
D
I
F
T
A
=25C
T
A
=70C
Units
30
V
T
A
=25C
Parameter
Reverse Voltage
A
2.2
20
3
Maximum Schottky
Max Q1
30
20
8.5
T
A
=25C
T
A
=70C
Power Dissipation
P
D
Pulsed Drain Current
B
Continuous Drain
Current
A
I
D
A
6.6
30
30
8.5
6.6
W
-55 to 150
-55 to 150
Junction and Storage Temperature Range
2
1.28
1.28
T
A
=25C
T
A
=70C
2
Gate-Source Voltage
20
30
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Drain-Source Voltage
AO4914
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
Rev 6: May 2005
Features
Q1 Q2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 8.5A I
D
= 8.5A
R
DS(ON)
< 18m
<18m
(V
GS
= 10V)
R
DS(ON)
< 28m
<28m
(V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
General Description
The AO4914 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
AO4914 is Pb-free (meets ROHS & Sony 259
specifications). AO4914L is a Green Product ordering
option. AO4914 and AO4914L are electrically identical.
SOIC-8
G1
S1
G2
S2/A
D1
D1
D2/K
D2/K
1
2
3
4
8
7
6
5
G2
D2
S2
K
A
G1
D1
S1
Q1
Q2
Alpha & Omega Semiconductor, Ltd.
AO4912, AO4912L
Symbol
Units
R
JL
Symbol
Units
R
JL
R
JL
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
74
110
Maximum Junction-to-Lead
C
Steady-State
35
40
Max
C/W
C/W
Parameter: Thermal Characteristics MOSFET Q2
Typ
Max
Maximum Junction-to-Ambient
A
t 10s
R
JA
48
40
Thermal Characteristics Schottky
62.5
40
48
74
62.5
C/W
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Lead
C
Steady-State
35
Typ
Maximum Junction-to-Ambient
A
Steady-State
Parameter: Thermal Characteristics MOSFET Q1
Maximum Junction-to-Ambient
A
t 10s
47.5
R
JA
62.5
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
Steady-State
110
110
Maximum Junction-to-Lead
C
Steady-State
71
32
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward
drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip
separately.
Alpha & Omega Semiconductor, Ltd.
AO4914, AO4914L
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
0.007
0.05
3.2
10
12
20
I
GSS
100
nA
V
GS(th)
1
1.8
3
V
I
D(ON)
30
A
15.5
18
T
J
=125C
22.3
27
23
28
m
g
FS
23
S
V
SD
0.45
0.5
V
I
S
3.5
A
C
iss
971
1165
pF
C
oss
190
pF
C
rss
110
pF
R
g
0.7
0.85
Q
g
(10V)
19.2
23
nC
Q
g
(4.5V)
9.36
11.2
nC
Q
gs
2.6
nC
Q
gd
4.2
nC
t
D(on)
5.2
7.5
ns
t
r
4.4
6.5
ns
t
D(off)
17.3
26
ns
t
f
3.3
5
ns
t
rr
18.8
23
ns
Q
rr
9.2
11
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode + Schottky Reverse Recovery Time
Body Diode + Schottky Reverse Recovery Charge
I
F
=8.5A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=8.5A
Reverse Transfer Capacitance
I
F
=8.5A, dI/dt=100A/
s
V
R
=30V, T
J
=125C
V
R
=30V, T
J
=150C
Q1 Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Forward Transconductance
Diode + Schottky Forward Voltage
I
DSS
mA
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
R
=30V
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
Gate-Body leakage current
V
GS
=0V, V
DS
=0V, f=1MHz
m
V
GS
=4.5V, I
D
=6A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=8.5A
DYNAMIC PARAMETERS
Maximum Body-Diode + Schottky Continuous Current
R
DS(ON)
Static Drain-Source On-Resistance
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.8
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, I
D
=8.5A
Total Gate Charge
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
Input Capacitance
Output Capacitance (FET + Schottky)
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in any a given
application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve provides a single
pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and
recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Alpha & Omega Semiconductor, Ltd.
AO4914, AO4914L
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
14
16
18
20
22
24
26
28
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
(Note F)
I
S
(A)
25C
125
FET+SCHOTTKY
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=8.5A
25C
125C
I
D
=8.5A
Alpha & Omega Semiconductor, Ltd.
AO4914, AO4914L
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
0
2
4
6
8
10
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
250
500
750
1000
1250
1500
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
C
oss
FET+SCHOTTKY
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=8.5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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