Symbol
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
Units
R
JL
Symbol
Units
R
JL
Parameter: Thermal Characteristics MOSFET Q1
Typ
Max
Maximum Junction-to-Ambient
A
t 10s
R
JA
47
62.5
Maximum Junction-to-Ambient
A
Steady-State
C/W
83
110
Maximum Junction-to-Lead
C
Steady-State
23
40
Parameter: Thermal Characteristics MOSFET Q2
Typ
Max
Maximum Junction-to-Ambient
A
t 10s
R
JA
31
40
Maximum Junction-to-Ambient
A
Steady-State
C/W
59
75
Maximum Junction-to-Lead
C
Steady-State
16
24
Max Q1
30
20
8.3
A
13
30
80
17.7
6.7
T
A
=25C
T
A
=70C
Power Dissipation
P
D
Pulsed Drain Current
B
Continuous Drain
Current
A
I
D
W
-55 to 150
-55 to 150
Junction and Storage Temperature Range
3
1.28
2.1
T
A
=25C
T
A
=70C
2
Gate-Source Voltage
20
30
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Drain-Source Voltage
Max Q2
AO4F800
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
Q1 Q2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 8.3A (V
GS
= 10V) I
D
=17.7A
R
DS(ON)
< 18m
< 6.5m (V
GS
= 10V)
R
DS(ON)
< 27m
< 8.5m (V
GS
= 4.5V)
General Description
The AO4F800 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters.
Standard Product AOF800 is Pb-free
(meets ROHS & Sony 259 specifications). AOF800L
is a Green Product ordering option. AOF800 and
AOF800L are electrically identical.
SOIC-14
G2
G1
D1
D1
1
2
3
4
5
6
7
14
13
12
11
10
9
8
S2
S2
S2
D2/S1
D2/S1
S1
S1
D2/S1
D2/S1
D2/S1
G1
D1
S1
G2
D2
S2
Q1
Q2
Alpha & Omega Semiconductor, Ltd.
AO4F800
Symbol
Min
Typ
Max Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.8
3
V
I
D(ON)
30
A
15
18
T
J
=125C
21
25
22
27
m
g
FS
18
23
S
V
SD
0.76
1
V
I
S
3
A
C
iss
1040 1250
pF
C
oss
190
pF
C
rss
120
pF
R
g
0.7
0.85
Q
g
(10V)
19.8
24
nC
Q
g
9.8
12
nC
Q
gs
2.5
nC
Q
gd
3.5
nC
t
D(on)
5.2
6.25
ns
t
r
5
6
ns
t
D(off)
20.5
25
ns
t
f
3.6
4.3
ns
t
rr
Body Diode Reverse Recovery time
I
F
=8.3A, dI/dt=100A/
s
15
18
ns
Q
rr
Body Diode Reverse Recovery charge I
F
=8.3A, dI/dt=100A/
s
8
10
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIG
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Q1 Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
= 20V
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=8.3A
m
V
GS
=4.5V, I
D
=6.7A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Forward Transconductance
V
DS
=5V, I
D
=8.3A
Diode Forward Voltage
I
S
=1A
Turn-Off Fall Time
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.8
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=10V, V
DS
=15V, I
D
=8.3A
Total Gate Charge
Turn-On Rise Time
Turn-Off DelayTime
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
AO4F800
Q1 Electrical Characteristics (T
J
=25C unless otherwise noted)
19
24
V
DS
=5V, I
D
=8.8A
1040
180
110
0.7
V
GS
=10V, V
DS
=15V, I
D
=8.8A
V
GS
=10V, V
DS
=15V, R
L
=1.7
, R
GEN
=3
I
F
=8.8A, dI/dt=100A/
s
I
F
=8.8A, dI/dt=100A/
s
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3V
3.5V
4V
4.5V
10V
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
10
14
18
22
26
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
125C
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0
25
50
75
100
125
150
Temperature (C)
Figure 4: On resistance vs. Junction Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
60
2
4
6
8
10
V
GS
(Volts)
Figure 5: On resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=8.3A
25C
I
D
=8.3A
125C
25C
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO4F800
Q1 Electrical Characteristics (T
J
=25C unless otherwise noted)
19
24
V
DS
=5V, I
D
=8.8A
1040
180
110
0.7
V
GS
=10V, V
DS
=15V, I
D
=8.8A
V
GS
=10V, V
DS
=15V, R
L
=1.7
, R
GEN
=3
I
F
=8.8A, dI/dt=100A/
s
I
F
=8.8A, dI/dt=100A/
s
0
2
4
6
8
10
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
250
500
750
1000
1250
1500
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pa
c
i
ta
nc
e
(pF)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
10
s
V
DS
=15V
I
D
=8.3A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
f=1MHz
V
GS
=0V
T
J(Max)
=150C, T
A
=25C
Alpha & Omega Semiconductor, Ltd.
AO4F800
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.8
2.5
V
I
D(ON)
80
A
5.4
6.5
T
J
=125C
7.56
9.1
6.8
8.5
m
g
FS
82
S
V
SD
0.7
1
V
I
S
4.5
A
C
iss
6060
7270
pF
C
oss
638
pF
C
rss
355
pF
R
g
0.45
0.54
Q
g
(10V)
103
124
nC
Q
g
(4.5V)
48
57
nC
Q
gs
18
nC
Q
gd
15
nC
t
D(on)
12
14
ns
t
r
8
10
ns
t
D(off)
51.5
62
ns
t
f
8.8
11
ns
t
rr
33.5
40
ns
Q
rr
22
26
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=17.7A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=17.7A
Reverse Transfer Capacitance
I
F
=17.7A, dI/dt=100A/
s
Q2 Electrical Characteristics (TJ=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
m
V
GS
=4.5V, I
D
=13A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=17.7A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.85
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=17.7A
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
PDF 
ZIP