Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
Typ
Max
78
110
106
150
R
JL
64
80
-12
20
Gate-Source Voltage
A
Continuous Drain
Current
A
T
A
=25C
I
D
T
A
=70C
Pulsed Drain Current
B
W
3.1
2.4
12
1.15
0.73
-2.1
-2.7
1.15
0.73
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
30
-30
20
Drain-Source Voltage
T
A
=70C
Power Dissipation
T
A
=25C
P
D
Steady-State
C/W
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
-55 to 150
-55 to 150
Maximum Junction-to-Lead
C
Steady-State
C/W
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
AO6602
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 3.1A
(V
GS
= 10V)
-2.7A
(V
GS
= -10V)
R
DS(ON)
< 75m
(V
GS
= 10V)
< 100m
(V
GS
= -10V)
< 115m
(V
GS
= 4.5V)
< 180m
(V
GS
= -4.5V)
General Description
The AO6602 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO6602 is Pb-free (meets ROHS &
Sony 259 specifications). AO6602L is a Green
Product ordering option. AO6602 and AO6602L are
electrically identical.
G1
D1
S1
G2
D2
S2
n-channel
p-channel
TSOP6
Top View
G2
S2
G1
D2
S1
D1
1
2
3
6
5
4
Alpha & Omega Semiconductor, Ltd.
AO6602
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.9
3
V
I
D(ON)
10
A
54
75
T
J
=125C
78
88
115
m
g
FS
4.5
S
V
SD
0.79
1
V
I
S
2.5
A
C
iss
200
240
pF
C
oss
40
pF
C
rss
20
pF
R
g
2.3
3
Q
g
(10V)
6.5
8.5
nC
Q
g
(4.5V)
3.1
4
nC
Q
gs
1.2
nC
Q
gd
1.6
nC
t
D(on)
3.3
ns
t
r
2.5
ns
t
D(off)
13.2
ns
t
f
1.7
ns
t
rr
9.4
12
ns
Q
rr
3.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Charge I
F
=3.1A, dI/dt=100A/
s
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=3.1A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
DS
=5V, I
D
=3.1A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=3.1A
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
N-Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=4.5V, I
D
=2A
I
S
=1A
Turn-On Rise Time
Gate resistance
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
V
GS
=0V, V
DS
=0V, f=1MHz
Reverse Transfer Capacitance
Turn-Off DelayTime
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate Drain Charge
DYNAMIC PARAMETERS
V
GS
=10V, V
DS
=15V, I
D
=3.1A
V
GS
=10V, V
DS
=15V, R
L
=4.7
,
R
GEN
=3
Gate Source Charge
Turn-On DelayTime
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 3 : June 2005
Alpha and Omega Semiconductor, Ltd.
AO6602
N-Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
0
3
6
9
12
15
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3V
3.5V
4V
6V
10V
5V
8V
0
2
4
6
8
10
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
40
50
60
70
80
90
100
110
120
0
2
4
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25
125
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
V
GS
=10V
I
D
=3.1A
V
GS
=4.5V
I
D
=2A
0
50
100
150
200
250
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=3.1A
25C
125C
4.5V
Alpha and Omega Semiconductor, Ltd.
AO6602
N-Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
0
2
4
6
8
10
0
1
2
3
4
5
6
7
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
100
200
300
400
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=3.1A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=90C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha and Omega Semiconductor, Ltd.
AO6602
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1
-1.9
-3
V
I
D(ON)
-5
A
77
100
T
J
=125C
110
130
180
m
g
FS
4.1
S
V
SD
-0.81
-1
V
I
S
-2
A
C
iss
260
312
pF
C
oss
55
pF
C
rss
44
pF
R
g
4.3
5
Q
g
(10)
5.8
7
nC
Q
g
(4.5)
3
4
nC
Q
gs
0.78
nC
Q
gd
1.6
nC
t
D(on)
7
ns
t
r
6
ns
t
D(off)
15
ns
t
f
7.5
ns
t
rr
12.5
15
ns
Q
rr
5.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-2.7A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-2.7A
Reverse Transfer Capacitance
Total Gate Charge(10V)
P-Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-4.5V, I
D
=-2A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-2.7A
I
F
=-2.7A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge(4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=5.6
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=-10V, V
DS
=-15V, I
D
=-2.7A
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 3 : June 2005
Alpha & Omega Semiconductor, Ltd.
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