Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
300
360
340
425
R
JL
280
320
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
T
A
=70C
0.22
Junction and Storage Temperature Range
-55 to 150
C
Power Dissipation
A
T
A
=25C
P
D
0.35
A
T
A
=70C
1.2
Pulsed Drain Current
B
10
Continuous Drain
Current
A
T
A
=25C
I
D
1.6
Drain-Source Voltage
20
V
Gate-Source Voltage
8
V
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Maximum
Units
AO7402
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 1.6 A (V
GS
= 4.5V)
R
DS(ON)
< 90m
(V
GS
= 4.5V)
R
DS(ON)
< 105m
(V
GS
= 2.5V)
R
DS(ON)
< 130m
(V
GS
= 1.8V)
General Description
The AO7402 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V, in the small SOT323 footprint. It can
be used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters.
Standard Product AO7402 is Pb-free (meets ROHS
& Sony 259 specifications). AO7402L is a Green Product
ordering option. AO7402 and AO7402L are electrically
identical.
G
D
S
S
G
D
SC-70
(SOT-323)
Top View
Alpha Omega Semiconductor, Ltd.
AO7402
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
0.4
0.55
0.8
V
I
D(ON)
10
A
75
90
T
J
=125C
106
130
86
105
m
103
130
m
g
FS
5.5
S
V
SD
0.69
1
V
I
S
0.5
A
C
iss
458
pF
C
oss
76
pF
C
rss
54
pF
R
g
3
Q
g
6.05
nC
Q
gs
0.7
nC
Q
gd
1.45
nC
t
D(on)
7.3
ns
t
r
5.6
ns
t
D(off)
40
ns
t
f
11
ns
t
rr
12.2
ns
Q
rr
3.23
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
I
F
=1.6A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=1.6A, dI/dt=100A/
s
Turn-On DelayTime
V
GS
=5V, V
DS
=10V, R
L
=6.25
,
R
GEN
=6
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=1.6A
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
V
DS
=5V, I
D
=1.6A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=1.6A
m
V
GS
=2.5V, I
D
=1.5A
V
GS
=1.8V, I
D
=1.4A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=8V
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=16V, V
GS
=0V
Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev
3: Sept 2005
Alpha & Omega Semiconductor, Ltd.
AO7402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
4
8
12
16
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=1.5V
2V
2.5V
8V
3V
4.5V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
25C
125C
V
DS
=5V
60
80
100
120
140
0
2
4
6
8
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
V
GS
=1.8V
V
GS
=2.5V
V
GS
=4.5V
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
liz
ed
On
-R
esistan
ce
V
GS
=1.8V
V
GS
=4.5V
V
GS
=2.5V
60
80
100
120
140
160
1
2
3
4
5
6
7
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
I
D
=1.6A
25C
125C
I
D
=1.6A
Alpha & Omega Semiconductor, Ltd.
AO7402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
2
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
200
400
600
800
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
C
oss
C
rss
0
4
8
12
16
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms 1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10
s
V
DS
=10V
I
D
=1.6A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=360C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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