Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
300
360
350
425
R
JL
280
320
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
12
Gate-Source Voltage
Drain-Source Voltage
-20
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
-1.2
-3
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
0.35
0.22
-55 to 150
T
A
=70C
I
D
-1.4
AO7413
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -20V
I
D
= -1.4A (V
GS
= -10V)
R
DS(ON)
< 113m
(V
GS
= -10V)
R
DS(ON)
< 135m
(V
GS
= -4.5V)
R
DS(ON)
< 180m
(V
GS
= -2.5V)
General Description
The AO7413 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge, and operation with gate
voltages as low as 1.8V, in the small SOT323 footprint. It
can be used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters. It is ESD protected to 2KV HBM. Standard
Product AO7413 is Pb-free (meets ROHS & Sony 259
specifications). AO7413L is a Green Product ordering
option. AO7413 and AO7413L are electrically identical.
S
G
D
SC-70
(SOT-323)
Top View
D
S
G
Alpha & Omega Semiconductor, Ltd.
AO7413
Symbol
Min
Typ
Max
Units
BV
DSS
-20
V
-0.5
T
J
=55C
-2.5
1
A
10
A
V
GS(th)
-0.7
-0.9
-1.4
V
I
D(ON)
-15
A
94
113
T
J
=125C
130
160
111
135
m
150
180
m
g
FS
5
S
V
SD
-0.84
-0.95
V
I
S
0.6
A
C
iss
512
620
pF
C
oss
77
pF
C
rss
62
pF
R
g
9.2
13
Q
g
4.9
6
nC
Q
gs
3.5
nC
Q
gd
3.7
nC
t
D(on)
11
13
ns
t
r
8
10
ns
t
D(off)
34
41
ns
t
f
12
15
ns
t
rr
12.9
16
ns
Q
rr
3.9
5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
On state drain current
V
GS
=-4.5V, V
DS
=-5V
Gate-Body leakage current
V
DS
=0V, V
GS
=10V
V
DS
=0V, V
GS
=12V
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-4.5V, V
DS
=-10V, R
L
=7.1
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-1.4A
Gate Source Charge
m
V
GS
=-4.5V, I
D
=-1.3A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-1.4A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
GSS
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
V
DS
=-16V, V
GS
=0V
Zero Gate Voltage Drain Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-1.4A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
I
D
=-250
A, V
GS
=0V
V
GS
=-2.5V, I
D
=-1.1A
V
GS
=-10V, I
D
=-1.4A
Reverse Transfer Capacitance
I
F
=-1.4A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-10V, f=1MHz
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev3: August 2005
Alpha & Omega Semiconductor, Ltd.
AO7413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
-3.5V
V
GS
=-1.5V
-3V
-6V
-8V
-4V
-2V
-2.5V
-5V
-7V
-9V
-10V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
3.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
80
100
120
140
160
180
0
1
2
3
4
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.4
0.8
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
V
GS
=-10V
V
GS
=-2.5V
I
D
=-1.3A
I
D
=-1.1A
80
120
160
200
240
280
320
360
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-1.4A
25C
125C
I
D
=-1.4A
V
GS
=-2.5V
V
GS
=-4.5V
Alpha & Omega Semiconductor, Ltd.
AO7413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
o
l
ts
)
0
200
400
600
800
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
2
4
6
8
10
12
14
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
C
oss
C
rss
0.01
0.10
1.00
10.00
100.00
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=-10V
I
D
=-1.4A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=360C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
T
on
T
P
D
T
on
P
D
Alpha & Omega Semiconductor, Ltd.
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