Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
360
415
400
460
R
JL
300
350
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Maximum
Units
V
Gate-Source Voltage
8
V
I
D
0.9
Drain-Source Voltage
20
T
A
=25C
P
D
0.3
A
T
A
=70C
0.7
Pulsed Drain Current
B
5
Continuous Drain
Current
A
T
A
=25C
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
T
A
=70C
0.19
Junction and Storage Temperature Range
-55 to 150
C
Power Dissipation
A
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
AO7800
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 0.9 A (V
GS
= 4.5V)
R
DS(ON)
< 300m
(V
GS
= 4.5V)
R
DS(ON)
< 350m
(V
GS
= 2.5V)
R
DS(ON)
< 450m
(V
GS
= 1.8V)
General Description
The AO7800 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.It
is ESD protected.
Standard Product AO7800 is Pb-
free (meets ROHS & Sony 259 specifications).
AO7800L is a Green Product ordering option.
AO7800 and AO7800L are electrically identical.
SC-70-6
(SOT-323)
Top View
D1
S1
G1
D2
S2
G2
S2
D2
G2
D1
G1
S1
Alpha Omega Semiconductor, Ltd.
AO7800
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
1
T
J
=55C
5
I
GSS
25
A
V
GS(th)
0.5
0.75
0.9
V
I
D(ON)
5
A
181
300
T
J
=125C
253
350
237
350
m
317
450
m
g
FS
2.6
S
V
SD
0.69
1
V
I
S
0.4
A
C
iss
101
120
pF
C
oss
17
pF
C
rss
14
pF
R
g
3
4
Q
g
1.57
1.9
nC
Q
gs
0.13
nC
Q
gd
0.36
nC
t
D(on)
3.2
ns
t
r
4
ns
t
D(off)
15.5
ns
t
f
2.4
ns
t
rr
6.7
8.1
ns
Q
rr
1.6
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
I
F
=0.8A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=0.8A, dI/dt=100A/
s
Turn-On DelayTime
V
GS
=5V, V
DS
=10V, R
L
=12.5
,
R
GEN
=6
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=0.8A
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
V
DS
=5V, I
D
=0.8A
Diode Forward Voltage
I
S
=0.5A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=0.9A
m
V
GS
=2.5V, I
D
=0.75A
V
GS
=1.8V, I
D
=0.7A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=8V
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=16V, V
GS
=0V
Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 3 : July 2003
Alpha & Omega Semiconductor, Ltd.
AO7800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=2V
3V
2.5V
8V
4V
3.5V
5V
10V
0
1
2
3
4
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
25C
125C
V
DS
=5V
160
200
240
280
320
360
400
440
480
0
1
2
3
4
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
V
GS
=1.8V
V
GS
=2.5V
V
GS
=4.5V
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.4
0.8
1.2
1.6
2.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
V
GS
=1.8V
V
GS
=4.5V
V
GS
=2.5V
I 0 7A
140
180
220
260
300
340
380
420
460
500
1
2
3
4
5
6
7
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
I
D
=0.9A
25C
125C
I
D
=0.9A
I
D
=0.75A
Alpha & Omega Semiconductor, Ltd.
AO7800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
50
100
150
200
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
C
oss
C
rss
0
4
8
12
16
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
0.0
0.1
1.0
10.0
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C, T
A
=25C
10
s
V
DS
=10V
I
D
=0.9A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=415C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
T
on
T
P
D
T
on
P
D
Alpha & Omega Semiconductor, Ltd.
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