Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
64
83
89
120
R
JL
53
70
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
12
Gate-Source Voltage
Drain-Source Voltage
20
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
6.3
30
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
1.5
1.08
-55 to 150
T
A
=70C
I
D
8
AO8804
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
March 2003
Features
V
DS
(V) = 20V
I
D
= 8A
R
DS(ON)
< 13m
(V
GS
= 10V)
R
DS(ON)
< 14m
(V
GS
= 4.5V)
R
DS(ON)
< 19m
(V
GS
= 2.5V)
R
DS(ON)
< 27m
(V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AO8804 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
AO8804
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
10
T
J
=55C
25
I
GSS
10
A
BV
GSO
12
V
V
GS(th)
0.5
0.75
1
V
I
D(ON)
30
A
10
13
T
J
=125C
13.3
16
11.5
14
m
15.4
19
m
22.2
27
m
g
FS
36
S
V
SD
0.73
1
V
I
S
2.4
A
C
iss
1810
pF
C
oss
232
pF
C
rss
200
pF
R
g
1.6
Q
g
17.9
nC
Q
gs
1.5
nC
Q
gd
4.7
nC
t
D(on)
2.5
ns
t
r
7.2
ns
t
D(off)
49
ns
t
f
10.8
ns
t
rr
20.2
ns
Q
rr
8
nC
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=8A
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
R
DS(ON)
I
S
=1A,V
GS
=0V
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=10V, f=1MHz
Zero Gate Voltage Drain Current
V
GS
=1.8V, I
D
=3A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=8A
V
DS
=V
GS
I
D
=250
A
V
DS
=16V, V
GS
=0V
V
DS
=0V, V
GS
=10V
V
GS
=2.5V, I
D
=4A
m
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
I
DSS
A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=8A
Gate-Body leakage current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=5A
Gate-Source Breakdown Voltage
V
DS
=0V, I
G
=250uA
Gate Threshold Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=8A, dI/dt=100A/
s
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=10V, R
L
=1.2
,
R
GEN
=3
Turn-On DelayTime
I
F
=8A, dI/dt=100A/
s
SWITCHING PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO8804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=1.5V
2V
2.5V
4.5V
10
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
5
10
15
20
25
30
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
liz
ed
On
-R
esistan
ce
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=5A
V
GS
=1.8V
V
GS
=1.8V
25C
125C
I
D
=5A
Alpha & Omega Semiconductor, Ltd.
AO8804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pa
c
i
ta
nc
e
(pF)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=10V
I
D
=8A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=83C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
TSSOP-8 Package Data
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
RECOMMENDED LAND PATTERN
PACKAGE MARKING DESCRIPTION
NOTE:
LOGO - AOS LOGO
8804 - PART NUMBER CODE.
F - FAB LOCATION
A - ASSEMBLY LOCATION
W - WEEK CODE.
L N - ASSEMBLY LOT CODE
TSSOP-8 PART NO. CODE
PART NO.
AO8804
CODE
8804
UNIT: mm
ALPHA & OMEGA
SEMICONDUCTOR, INC.
0.002
---
0.006
A1
0.05
---
0.15
y
D
E1
L
e
E
b
c
A2
---
0.10
---
---
0
8
1.00
---
---
6.40 BSC
0.60
4.40
0.65 BSC
3.00
2.90
4.30
0.45
0.19
0.09
0.80
3.10
4.50
0.75
1.05
0.20
0.30
---
0.004
---
0
---
8
0.039
0.252 BSC
0.024
0.173
0.0259 (REF)
0.118
0.114
0.169
0.018
0.007
0.004
0.031
---
---
0.122
0.177
0.030
0.041
0.008
0.012
SYMBOLS
A
NOM
---
DIMENSIONS IN MILLIMETERS
MIN
---
1.20
MAX
NOM
DIMENSIONS IN INCHES
MIN
---
---
0.047
MAX
F A W L T
LOGO
8 8 0 4
Rev. A
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