Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
73
90
96
125
R
JL
63
75
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
12
Gate-Source Voltage
Drain-Source Voltage
20
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
6.3
30
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
1.4
0.9
-55 to 150
T
A
=70C
I
D
7.9
AO8808A
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 7.9A (V
GS
= 10V)
R
DS(ON)
< 14m
(V
GS
= 10V)
R
DS(ON)
< 15m
(V
GS
= 4.5V)
R
DS(ON)
< 20m
(V
GS
= 2.5V)
R
DS(ON)
< 28m
(V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AO8808A uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
Standard Product AO8808A is Pb-free (meets ROHS
& Sony 259 specifications). AO8808AL is a Green
Product ordering option. AO8808A and AO8808AL
are electrically identical.
D2
G1
S1
S1
D1
G2
S2
S2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
AO8808A
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
10
T
J
=55C
25
I
GSS
10
A
BV
GSO
12
V
V
GS(th)
0.5
0.75
1
V
I
D(ON)
30
A
10.6
14
T
J
=125C
14.2
18
11.7
15
m
15.2
20
m
21.5
28
m
g
FS
36
S
V
SD
0.6
1
V
I
S
2.4
A
C
iss
1810
pF
C
oss
232
pF
C
rss
200
pF
R
g
1.6
Q
g
17.9
nC
Q
gs
1.5
nC
Q
gd
4.7
nC
t
D(on)
2.5
ns
t
r
7.2
ns
t
D(off)
49
ns
t
f
10.8
ns
t
rr
20.2
ns
Q
rr
8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=8A, dI/dt=100A/
s
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=10V, R
L
=1.2
,
R
GEN
=3
Turn-On DelayTime
I
F
=8A, dI/dt=100A/
s
SWITCHING PARAMETERS
A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=8A
Gate-Body leakage current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=5A
Gate-Source Breakdown Voltage
V
DS
=0V, I
G
=250uA
Gate Threshold Voltage
I
DSS
Zero Gate Voltage Drain Current
V
DS
=V
GS
I
D
=250
A
V
DS
=16V, V
GS
=0V
V
DS
=0V, V
GS
=10V
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=8A
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
R
DS(ON)
I
S
=1A,V
GS
=0V
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=10V, f=1MHz
m
V
GS
=2.5V, I
D
=4A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
V
GS
=1.8V, I
D
=3A
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=8A
Gate Source Charge
Gate Drain Charge
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 1: Sept 2005
Alpha & Omega Semiconductor, Ltd.
AO8808A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=1.5V
2V
2.5V
4.5V
10
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
5
10
15
20
25
30
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=5A
V
GS
=1.8V
V
GS
=1.8V
25C
125C
I
D
=5A
Alpha & Omega Semiconductor, Ltd.
AO8808A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
0
1
2
3
4
5
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pa
c
i
ta
nc
e
(pF)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=10V
I
D
=8A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=90C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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