Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
73
90
96
125
R
JL
63
75
Junction and Storage Temperature Range
A
P
D
C
1.4
1
-55 to 150
T
A
=70C
I
D
8
6.3
30
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Gate-Source Voltage
Drain-Source Voltage
20
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO8808
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 8A (V
GS
= 10V)
R
DS(ON)
< 14m
(V
GS
= 10V)
R
DS(ON)
< 15m
(V
GS
= 4.5V)
R
DS(ON)
< 20m
(V
GS
= 2.5V)
R
DS(ON)
< 28m
(V
GS
= 1.8V)
General Description
The AO8808 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V V
GS(MAX)
rating.
This device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration.
Standard Product AO8808 is Pb-free (meets
ROHS & Sony 259 specifications). AO8808L is a Green
Product ordering option. AO8808 and AO8808L are electrically
identical.
D2
G1
D1
S1
G2
D2
S2
G1
S1
S1
D1
G2
S2
S2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
Alpha & Omega Semiconductor, Ltd.
AO8808
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
10
T
J
=55C
25
I
GSS
100
nA
V
GS(th)
0.5
0.75
1
V
I
D(ON)
30
A
10.6
14
T
J
=125C
14.2
17
12.2
15
m
16.1
20
m
23.2
28
m
g
FS
36
S
V
SD
0.73
1
V
I
S
2.4
A
C
iss
1810
pF
C
oss
232
pF
C
rss
200
pF
R
g
1.6
Q
g
19.8
nC
Q
gs
1.8
nC
Q
gd
5
nC
t
D(on)
3.3
ns
t
r
5.9
ns
t
D(off)
44
ns
t
f
7.7
ns
t
rr
22
ns
Q
rr
9.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=8A, dI/dt=100A/
s
V
GS
=0V, V
DS
=10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=8A
Gate Source Charge
Gate Drain Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Turn-On DelayTime
V
DS
=5V, I
D
=8A
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=10V, R
L
=1.3
,
R
GEN
=3
m
V
GS
=4.5V, I
D
=5A
I
S
=1A,V
GS
=0V
V
GS
=1.8V, I
D
=3A
Forward Transconductance
Diode Forward Voltage
Static Drain-Source On-Resistance
R
DS(ON)
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=16V, V
GS
=0V
V
DS
=0V, V
GS
=12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=8A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=2.5V, I
D
=4A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=8A
Reverse Transfer Capacitance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev3: August 2005
Alpha & Omega Semiconductor, Ltd.
AO8808
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=1.5V
2V
2.5V
4.5V
10
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
5
10
15
20
25
30
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=5A
V
GS
=1.8V
V
GS
=1.8V
25C
125C
I
D
=5A
Alpha & Omega Semiconductor, Ltd.
AO8808
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to
Ambient (Note E)
Pow
e
r
(W)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
Normalized Transient
Thermal Resistance
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
mp
s
)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
100
s
10m
1m
0 1
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=10V
I
D
=8A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=90C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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