Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
64
83
89
120
R
JL
53
70
Junction and Storage Temperature Range
A
P
D
C
1.5
0.96
-55 to 150
T
A
=70C
I
D
7.5
6
30
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Gate-Source Voltage
Drain-Source Voltage
20
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO8814
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 7.5 A (V
GS
= 10V)
R
DS(ON)
< 16m
(V
GS
= 10V)
R
DS(ON)
< 18m
(V
GS
= 4.5V)
R
DS(ON)
< 24m
(V
GS
= 2.5V)
R
DS(ON)
< 34m
(V
GS
= 1.8V)
ESD Rating: 2500V HBM
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
General Description
The AO8814 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
Standard Product AO8814is Pb-
free (meets ROHS & Sony 259 specifications).
AO8814L is a Green Product ordering option.
AO8814 and AO8814L are electrically identical.
Alpha & Omega Semiconductor, Ltd.
AO8814
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
1
T
J
=55C
5
I
GSS
10
A
BV
GSO
12
V
V
GS(th)
0.5
0.71
1
V
I
D(ON)
30
A
13
16
T
J
=125C
18
22
15
18
m
19
24
m
26
34
m
g
FS
30
S
V
SD
0.74
1
V
I
S
2.5
A
C
iss
1390
pF
C
oss
190
pF
C
rss
150
pF
R
g
1.5
Q
g
15.4
nC
Q
gs
1.4
nC
Q
gd
4
nC
t
D(on)
6.2
ns
t
r
11
ns
t
D(off)
40.5
ns
t
f
10
ns
t
rr
15
ns
Q
rr
5.1
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate-Source Breakdown Voltage
V
DS
=0V, I
G
=250uA
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=10V, f=1MHz
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=5V, V
DS
=10V, R
L
=1.3
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=7.5A
Gate Source Charge
m
V
GS
=2.5V, I
D
=6A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=7.5A
V
GS
=1.8V, I
D
=5A
V
GS
=4.5V, I
D
=7A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=16V, V
GS
=0V
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=10V
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=7.5A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=7.5A
Reverse Transfer Capacitance
I
F
=7.5A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 2: June 2005
Alpha & Omega Semiconductor, Ltd.
AO8814
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
I
D
(A)
V
GS
=1.5V
V
GS
=2V
3V
4V
10V
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
25C
125C
V
DS
=5V
0
10
20
30
40
50
0
5
10
15
20
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
V
GS
=10V
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
No
r
m
al
i
z
e ON-Resi
stan
ce
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
I
D
=7A
I
D
=6A
I
D
=5A
V
GS
=10V
I
D
=7.5A
10
20
30
40
50
60
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
I
D
=7.5A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO8814
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
t
s)
V
DS
=10V
I
D
=7.5A
0
400
800
1200
1600
2000
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
C
rss
C
oss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(
W
)
T
J(Max)
=150C
T
A
=25C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
T
on
T
P
D
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=83C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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