Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
64
83
89
120
R
JL
53
70
Junction and Storage Temperature Range
A
P
D
C
1.5
0.96
-55 to 150
T
A
=70C
I
D
7
5.5
30
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Gate-Source Voltage
Drain-Source Voltage
30
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO8818
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
V
DS
(V) = 30V
I
D
= 7A (V
GS
= 10V)
R
DS(ON)
< 18m
(V
GS
= 10V)
R
DS(ON)
< 20m
(V
GS
= 4.5V)
R
DS(ON)
< 27m
(V
GS
= 2.5V)
ESD Rating: 1500V HBM
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
General Description
The AO8818 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected. This
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration.
Standard Product AO8818 is Pb-free
(meets ROHS & Sony 259 specifications). AO8818L is
a Green Product ordering option. AO8818 and
AO8818L are electrically identical.
Alpha & Omega Semiconductor, Ltd.
AO8818
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
10
A
BV
GSO
12
V
V
GS(th)
0.6
0.94
1.5
V
I
D(ON)
30
A
15
18
T
J
=125C
21
25
17
20
m
22
27
m
g
FS
45
S
V
SD
0.74
1
V
I
S
2.5
A
C
iss
880
1060
pF
C
oss
130
pF
C
rss
90
pF
R
g
1.3
2
Q
g
11.6
14
nC
Q
gs
1.9
nC
Q
gd
4.6
nC
t
D(on)
8.7
ns
t
r
13.7
ns
t
D(off)
36
ns
t
f
11
ns
t
rr
16
20
ns
Q
rr
7.7
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=7A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=7A
Reverse Transfer Capacitance
I
F
=7A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=10V
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=2.5V, I
D
=4A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=7A
V
GS
=4.5V, I
D
=5A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=5V, V
DS
=15V, R
L
=2.2
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=15V, I
D
=7A
Gate Source Charge
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=15V, f=1MHz
Gate Drain Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate-Source Breakdown Voltage
V
DS
=0V, I
G
=250uA
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 1: Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO8818
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
I
D
(A)
V
GS
=2V
V
GS
=2.5V
3.5V
10V
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
25C
125C
V
DS
=5V
0
10
20
30
40
0
5
10
15
20
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
V
GS
=4.5V
V
GS
=2.5V
V
GS
=10V
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
r
m
al
i
z
e ON-Resi
stan
ce
V
GS
=4.5V
V
GS
=2.5V
I
D
=5A
I
D
=4A
V
GS
=10V
I
D
=7A
10
20
30
40
50
60
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
I
D
=7A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO8818
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
t
s)
V
DS
=15V
I
D
=7A
0
400
800
1200
1600
2000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
ap
acit
an
ce (
p
F
)
C
iss
C
rss
C
oss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
T
J(Max)
=150C
T
A
=25C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
aliz
ed
T
r
an
sien
t
T
h
e
r
m
al R
esist
an
ce
T
on
T
P
D
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=83C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
mps
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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