Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
10
12
45
55
R
JC
1.35
1.8
Maximum Junction-to-Case
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
T
A
=70C
1.45
Junction and Storage Temperature Range
-55 to 175
Power Dissipation
A
T
A
=25C
P
DSM
2.2
A
Repetitive avalanche energy L=0.1mH
C
mJ
Power Dissipation
B
T
C
=25C
P
D
W
T
C
=100C
Avalanche Current
C
Continuous Drain
Current
Maximum
Units
Parameter
T
C
=25C
T
C
=100C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
I
D
Gate-Source Voltage
Drain-Source Voltage
-60
Pulsed Drain Current
C
-30
-20
-60
C
V
V
20
42
A
-26
134
83
AOB403
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -60V
I
D
= -30A (V
GS
=
-10V)
R
DS(ON)
< 44m
(V
GS
= -10V ) @ 30A
R
DS(ON)
< 55m
(V
GS
= -4.5V ) @ 20A
General Description
The AOB403 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the D2-PAK package, this device is well suited for
high current load applications.
Standard product
AOB403 is Pb-free (meets ROHS & Sony 259
specifications). AOB403L is a Green Product ordering
option. AOB403 and AOB403L are electrically
identical.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
AOB403
Symbol
Min
Typ
Max
Units
BV
DSS
-60
V
-0.003
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1
-1.9
-3
V
I
D(ON)
-60
A
36
44
T
J
=125C
51
62
43
55
m
g
FS
50
S
V
SD
-0.73
-1
V
I
S
-30
A
C
iss
2977
3600
pF
C
oss
241
pF
C
rss
153
pF
R
g
2
2.4
Q
g
(10V)
44.6
54
nC
Q
g
(4.5V)
20.8
25
nC
Q
gs
9.9
nC
Q
gd
10
nC
t
D(on)
13.7
ns
t
r
8.3
ns
t
D(off)
37
ns
t
f
9.7
ns
t
rr
40
48
ns
Q
rr
56
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-30A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250A, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-30A
Reverse Transfer Capacitance
I
F
=-30A, dI/dt=100A/s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250A
V
DS
=-48V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-4.5V, I
D
=-20A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-30A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-30V, R
L
=1,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-30V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-30V, I
D
=-30A
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating.
Rev1:May2005
Alpha & Omega Semiconductor, Ltd.
AOB403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
0
10
20
30
40
50
60
0
5
10
15
20
25
30
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
2
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
rm
aliz
ed
O
n
-
R
esist
an
ce
V
GS
=-4.5V
I
D
=-20A
V
GS
=-10V
I
D
=-30A
20
40
60
80
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-30A
25C
125C
0
5
10
15
20
25
30
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A)
V
GS
=-3V
-3.5V
-6V
-10V
-4.5V
-5V
-4V
Alpha & Omega Semiconductor, Ltd.
AOB403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
45
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
ol
ts
)
0
400
800
1200
1600
2000
2400
2800
3200
3600
4000
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
acit
an
ce (
p
F
)
C
iss
0
200
400
600
800
1000
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
No
rm
aliz
ed
T
r
an
sien
t
T
h
erm
al Resist
an
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(Amps
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175C, T
A
=25C
V
DS
=-30V
I
D
=-30A
A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
JC
.R
JC
R
JC
=1.8C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175C
T
A
=25C
10s
Alpha & Omega Semiconductor, Ltd.
AOB403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
JA
No
rm
aliz
ed
T
r
an
sien
t
T
h
erm
al Resist
an
ce
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=55C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
15
20
25
30
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
-I
D
(
A
)
,
Peak Avalan
ch
e Cu
rren
t
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
owe
r
Di
s
s
i
pa
ti
on (W
)
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
C
u
rren
t
rat
i
n
g
-
I
D
(A)
DD
D
A
V
BV
I
L
t
-
=
T
A
=25C
0
10
20
30
40
50
60
70
80
90
100
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Po
w
e
r (
W
)
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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