Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
8.1
12
33
40
R
JL
0.84
1.5
A
Repetitive avalanche energy L=0.1mH
C
220
mJ
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Pulsed Drain Current
Power Dissipation
B
T
C
=25C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
110
68
200
Avalanche Current
C
40
Power Dissipation
A
T
A
=25C
P
DSM
Continuous Drain
Current
B,G
Maximum
Units
Parameter
T
A
=25C
G
T
A
=100C
B
30
W
Junction and Storage Temperature Range
A
P
D
C
100
50
-55 to 175
T
C
=100C
I
D
2.5
W
T
A
=70C
1.6
AOB418
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 110A (V
GS
= 10V)
R
DS(ON)
< 6m
(V
GS
= 10V)
R
DS(ON)
< 7.2m
(V
GS
= 4.5V)
General Description
The AOB418 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOB418 is Pb-free (meets ROHS
& Sony 259 specifications). AOB418L is a Green
Product ordering option. AOv and AOB418L are
electrically identical.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.
AOB418
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.5
2
V
I
D(ON)
85
A
4.9
6
T
J
=125C
8.4
10.5
5.9
7.2
m
g
FS
103
S
V
SD
0.73
1
V
I
S
110
A
C
iss
2100
pF
C
oss
536
pF
C
rss
165
pF
R
g
0.95
Q
g
(4.5V)
19.6
nC
Q
gs
3.6
nC
Q
gd
8
nC
t
D(on)
5.9
ns
t
r
15.9
ns
t
D(off)
34
ns
t
f
20
ns
t
rr
32.5
ns
Q
rr
26
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=30A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=30A
Reverse Transfer Capacitance
I
F
=30A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
m
V
GS
=4.5V, I
D
=30A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=30A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.5
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=15V, I
D
=30A
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The Power
dissipation P
DSM
is based on steady-state R
JA
and the maximum allowed junction temperature of 150C. The value in any given application depends
on the user's specific board design, and the maximum temperature
of 175C may be used if the PCB or heatsink allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev3: August 2005
Alpha & Omega Semiconductor, Ltd.
AOB418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=2.5V
3V
10V
3.5V
0
10
20
30
40
50
60
1
1.5
2
2.5
3
3.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
4.5
5
5.5
6
6.5
7
7.5
0
10
20
30
40
50
60
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
V
GS
=10V
V
GS
=4.5V
4
8
12
16
20
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=30A
25C
125C
I
D
=30A
Alpha & Omega Semiconductor, Ltd.
AOB418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
5
10
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
500
1000
1500
2000
2500
3000
3500
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Po
w
e
r
(
W
)
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
C
oss
C
rss
0.1
1
10
100
1000
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=30A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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