Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
11.2
13.5
50
60
R
JC
2.5
3
Maximum Junction-to-Case
B
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
Steady-State
C/W
Maximum Junction-to-Ambient
A
W
T
C
=100C
25
Junction and Storage Temperature Range
-55 to 175
C
Power Dissipation
B
T
C
=25C
P
D
50
Avalanche Current
C
12
A
Repetitive avalanche energy L=0.1mH
C
23
mJ
A
T
C
=100C
12
Pulsed Drain Current
C
30
Continuous Drain
Current
G
T
C
=25C
I
D
12
Drain-Source Voltage
60
V
Gate-Source Voltage
20
V
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Maximum
Units
t 10s
R
JA
C/W
Power Dissipation
A
T
A
=25C
P
DSM
2
W
T
A
=70C
1.3
AOB430
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 60V
I
D
= 12A (Vgs=10V)
R
DS(ON)
< 63 m
(V
GS
=10V)
R
DS(ON)
< 85 m
(V
GS
= 6V)
General Description
The AOB430 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications.
Standard product
AOB430 is
Pb-free (meets ROHS & Sony 259 specifications).
AOB430L is a Green Product ordering option.
AOB430 and AOB430L are electrically identical.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected to
Tab
Alpha Omega Semiconductor, Ltd.
AOB430
Symbol
Min
Typ
Max
Units
BV
DSS
60
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
2.2
3
V
I
D(ON)
30
A
53
63
T
J
=125C
95
60
85
m
g
FS
14
S
V
SD
0.74
1
V
I
S
12
A
C
iss
450
540
pF
C
oss
61
pF
C
rss
27
pF
R
g
1.35
2
Q
g
(10V)
7.5
10
nC
Q
g
(4.5V)
3.8
5
nC
Q
gs
1.2
nC
Q
gd
1.9
nC
t
D(on)
4.2
ns
t
r
3.4
ns
t
D(off)
16
ns
t
f
2
ns
t
rr
27.6
35
ns
Q
rr
30
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0:Aug 2005
I
F
=12A, dI/dt=100A/
s
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=10mA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=12A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=30V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
,
I
D
=250
A
V
DS
=48V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=4.5V, I
D
=6A
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=12A
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=12A
V
GS
=10V, V
DS
=30V, R
L
=2.5
,
R
GEN
=3
Body Diode Reverse Recovery Charge
I
F
=12A, dI/dt=100A/
s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
Power dissipation P
DSM
is based on R
JA
and the maximum allowed junction temperature of 150C. The value in any given application depends on
the user's specific board design, and the maximum temperature fo 175C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AOB430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
2
2.5
3
3.5
4
4.5
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
40
50
60
70
80
0
4
8
12
16
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(m
)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
Norm
al
i
z
ed On-Resi
stance
V
GS
=4.5V,6A
V
GS
=10V, 12A
40
60
80
100
120
140
160
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(m
)
25C
125C
V
DS
=5V
V
GS
=6V
V
GS
=10V
I
D
=12A
25C
125C
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=3V
6V
10V
5V
3.5V
4V
4.5V
7V
Alpha & Omega Semiconductor, Ltd.
AOB430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
2
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
100
200
300
400
500
600
700
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capaci
tance (pF)
C
iss
0
40
80
120
160
200
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Po
w
e
r
(
W
)
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
Norm
al
i
z
ed Transi
ent
Therm
al
Resi
stance
C
oss
C
rss
V
DS
=30V
I
D
=12A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JC
.R
JC
R
JC
=3C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175C
T
A
=25C
0.1
1
10
100
1000
0.1
1
10
100
1000
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
10
s
100
s
1ms, DC
DC
R
DS(ON)
limited
T
J(Max)
=175C, T
A
=25C
Alpha & Omega Semiconductor, Ltd.
AOB430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
o
wer D
i
ssi
pat
i
on (
W
)
0
4
8
12
16
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
C
u
rrent
rat
i
ng I
D
(A)
0
2
4
6
8
10
12
14
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A),
P
eak Aval
anche Current
T
A
=25C
DD
D
A
V
BV
I
L
t
-
=
0
20
40
60
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Po
w
e
r
(
W
)
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
JA
Norm
al
i
z
ed Transi
ent
Therm
al
Resi
stance
T
on
T
P
D
Single Pulse
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=60C/W
Alpha & Omega Semiconductor, Ltd.
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