Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
16.7
25
40
50
R
JC
1.9
2.5
C
V
V
20
30
A
-26
134
60
Gate-Source Voltage
Drain-Source Voltage
-60
Pulsed Drain Current
C
-26
-18
-60
Avalanche Current
C
Continuous Drain
Current
G
Maximum
Units
Parameter
T
C
=25C
T
C
=100C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
I
D
P
DSM
2.5
A
Repetitive avalanche energy L=0.1mH
C
mJ
Power Dissipation
B
T
C
=25C
P
D
W
T
C
=100C
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
T
A
=70C
1.6
Junction and Storage Temperature Range
-55 to 175
Power Dissipation
A
T
A
=25C
Maximum Junction-to-Case
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
AOD409
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -60V
I
D
= -26A (V
GS
= -10V)
R
DS(ON)
< 40m
(V
GS
= -10V) @ -20A
R
DS(ON)
< 55m
(V
GS
= -4.5V)
General Description
The AOD409 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
Standard Product
AOD409 is Pb-free (meets ROHS & Sony 259
specifications). AOD409L is a Green Product
ordering option. AOD409 and AOD409L are
electrically identical.
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.
AOD409
Symbol
Min
Typ
Max
Units
BV
DSS
-60
V
-0.003
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1.2
-1.9
-2.4
V
I
D(ON)
-60
A
32
40
T
J
=125C
53
43
55
m
g
FS
32
S
V
SD
-0.73
-1
V
I
S
-30
A
C
iss
2977
3600
pF
C
oss
241
pF
C
rss
153
pF
R
g
2
2.4
Q
g
(10V)
44
54
nC
Q
g
(4.5V)
22.2
28
nC
Q
gs
9
nC
Q
gd
10
nC
t
D(on)
12
ns
t
r
14.5
ns
t
D(off)
38
ns
t
f
15
ns
t
rr
40
50
ns
Q
rr
59
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-30V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-30V, I
D
=-20A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-30V, R
L
=1.5,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
m
V
GS
=-4.5V, I
D
=-20A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-20A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250A
V
DS
=-48V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-20A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250A, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-20A
Reverse Transfer Capacitance
I
F
=-20A, dI/dt=100A/s
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating.
Rev 3: June 2005
Alpha & Omega Semiconductor, Ltd.
AOD409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
0
10
20
30
40
50
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
2
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
Norm
a
lize
d O
n-
Re
s
is
t
a
nc
e
V
GS
=-4.5V
I
D
=-20A
V
GS
=-10V
I
D
=-20A
20
40
60
80
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-20A
25C
125C
0
5
10
15
20
25
30
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-3V
-3.5V
-6V
-10V
-4.5V
-5V
-4V
Alpha & Omega Semiconductor, Ltd.
AOD409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
45
50
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Vo
l
ts)
0
400
800
1200
1600
2000
2400
2800
3200
3600
4000
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
ap
aci
tan
ce (p
F
)
C
iss
0
200
400
600
800
1000
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Po
wer
(W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
Norm
a
lize
d Tra
ns
ie
nt
T
h
er
mal
R
esi
stan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
mp
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175C, T
A
=25C
V
DS
=-30V
I
D
=-20A
A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
JC
.R
JC
R
JC
=2.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
AOD409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
JA
Norm
a
lize
d Tra
ns
ie
nt
T
h
er
mal
R
esi
stan
ce
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=50C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
15
20
25
30
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
-I
D
(A
),
Peak A
val
an
ch
e C
u
r
r
en
t
0
10
20
30
40
50
60
70
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
ow
e
r Dis
s
ipa
t
ion (
W
)
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
Curre
nt
ra
t
ing -
I
D
(A
)
DD
D
A
V
BV
I
L
t
-
=
T
A
=25C
0
10
20
30
40
50
60
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Po
wer
(W
)
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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