Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
16.7
25
40
50
R
JC
1.9
2.5
60
W
T
C
=100C
30
A
Repetitive avalanche energy L=0.1mH
C
36
mJ
W
Junction and Storage Temperature Range
A
P
DSM
C
2.5
1.6
-55 to 175
T
A
=70C
I
D
Continuous Drain
Current
G
Maximum
Units
Parameter
T
C
=25C
T
C
=100C
30
Maximum Junction-to-Ambient
A
Steady-State
10
10
30
Avalanche Current
C
15
Power Dissipation
B
T
C
=25C
P
D
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
20
Pulsed Drain Current
C
Power Dissipation
A
T
A
=25C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Case
B
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
AOD420
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 10A (V
GS
= 10V)
R
DS(ON)
< 28m
(V
GS
= 10V)
R
DS(ON)
< 42m
(V
GS
= 4.5V)
General Description
The AOD420 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product
AOD420 is Pb-free
(meets ROHS & Sony 259 specifications). AOD420L
is a Green Product ordering option. AOD420 and
AOD420L are electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.
AOD420
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.8
3
V
I
D(ON)
40
A
21
28
T
J
=125C
31
40
32.5
42
m
g
FS
15.6
S
V
SD
0.75
1
V
I
S
10
A
C
iss
710
850
pF
C
oss
120
pF
C
rss
72
pF
R
g
1.1
3.6
Q
g
(10V)
14.4
18
nC
Q
g
(4.5V)
7
8.4
nC
Q
gs
2.6
nC
Q
gd
2.7
nC
t
D(on)
5.6
ns
t
r
2.4
ns
t
D(off)
15.6
ns
t
f
2.2
ns
t
rr
13.4
21
ns
Q
rr
4.4
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=10V, V
DS
=15V, I
D
=10A
Total Gate Charge
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.5,
R
GEN
=3
Turn-Off Fall Time
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
m
V
GS
=4.5V, I
D
=7A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=10A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=10A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250A, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=10A
Reverse Transfer Capacitance
I
F
=10A, dI/dt=100A/s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The Power
dissipation P
DSM
is based on R
JA
and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by bond-wires. Rev4: August 2005
Alpha & Omega Semiconductor, Ltd.
AOD420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3.5V
4.5V
4V
3.0V
10V
5V
0
4
8
12
16
20
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
10
15
20
25
30
35
40
45
50
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
rmal
i
z
ed
O
n
-
R
esi
st
an
ce
V
GS
=10V
V
GS
=4.5
10
20
30
40
50
60
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=10A
25C
125C
I
D
=10A
7V
Alpha & Omega Semiconductor, Ltd.
AOD420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
4
8
12
16
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts
)
0
200
400
600
800
1000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
paci
t
a
nce (
pF)
C
iss
0
10
20
30
40
50
60
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)
Power (W)
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JA
N
o
r
m
a
l
i
z
ed Tr
ansi
ent
Ther
m
a
l
R
e
si
st
ance
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s
)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
100s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=10A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=50C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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