Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
15
18
45
55
R
JC
1
1.5
Maximum Junction-to-Case
B
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
C/W
Maximum Junction-to-Ambient
A
W
T
A
=70C
1.5
Junction and Storage Temperature Range
-55 to 175
C
Power Dissipation
A
T
A
=25C
P
DSM
2.3
Avalanche Current
C
20
A
Repetitive avalanche energy L=0.1mH
C
200
mJ
A
T
C
=100C
28
Pulsed Drain Current
C
80
Continuous Drain
Current
T
C
=25C
I
D
40
Drain-Source Voltage
105
V
Gate-Source Voltage
25
V
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Maximum
Units
Steady-State
R
JA
C/W
Power Dissipation
B
T
C
=25C
P
D
100
W
T
C
=100C
50
AOD464
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 105V
I
D
= 40 A (V
GS
=10V)
R
DS(ON)
< 28 m
(V
GS
=10V) @ 20A
R
DS(ON)
< 31 m
(V
GS
= 6V)
General Description
The AOD464 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications. Standard Product AOD464 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD464L is a Green Product ordering option. AOD464
and AOD464L are electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
AOD464
Symbol
Min
Typ
Max
Units
BV
DSS
105
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
2.5
3.2
4
V
I
D(ON)
80
A
21.5
28
T
J
=125C
32
40
24
31
m
g
FS
50
S
V
SD
0.73
1
V
I
S
55
A
C
iss
2038
2445
pF
C
oss
204
pF
C
rss
85
pF
R
g
1.3
1.56
Q
g
(10V)
38.5
46
nC
Q
gs
8
nC
Q
gd
10
nC
t
D(on)
12.7
ns
t
r
8.2
ns
t
D(off)
31.5
ns
t
f
11.2
ns
t
rr
59.6
74
ns
Q
rr
161
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: July2005
Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=10mA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=84V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=25V
Gate Threshold Voltage
V
DS
=V
GS
,
I
D
=250
A
On state drain current
V
GS
=10V, V
DS
=5V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=20A
m
V
GS
=6V, I
D
=20A
Forward Transconductance
V
DS
=5V, I
D
=20A
Diode Forward Voltage
I
S
=1A, V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=10V, V
DS
=50V, I
D
=20A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=50V, R
L
=2.7
,
R
GEN
=3
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
Power dissipation P
DSM
is based on R
JA
and the maximum allowed junction temperature of 150C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AOD464
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
2
2.5
3
3.5
4
4.5
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
10
20
30
40
0
10
20
30
40
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(O
N)
(m
)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
rm
aliz
ed
O
n
-
R
esist
an
ce
V
GS
=6V,20A
V
GS
=10V, 20A
20
30
40
50
60
4
8
12
16
20
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=6V
V
GS
=10V
I
D
=20A
25C
125C
0
20
40
60
80
100
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=4.5V
6V
10V
5V
Alpha & Omega Semiconductor, Ltd.
AOD464
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
10
20
30
40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts
)
0
1
2
3
0
20
40
60
80
100
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
acit
a
n
ce (
n
F
)
C
iss
0
100
200
300
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
No
rm
aliz
ed
T
r
an
sien
t
T
h
e
rm
al Resist
an
ce
C
oss
C
rss
V
DS
=50V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JC
.R
JC
R
JC
=1.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175C
T
A
=25C
0.1
1
10
100
1000
0.1
1
10
100
1000
V
DS
(Volts)
I
D
(A
mp
s)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
10
s
100
s
1ms, DC
DC
R
DS(ON)
limited
T
J(Max)
=175C, T
A
=25C
Alpha & Omega Semiconductor, Ltd.
AOD464
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
50
100
150
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
o
we
r
Di
s
s
i
pa
ti
on (W
)
0
10
20
30
40
50
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
C
u
rren
t
rat
i
n
g
I
D
(A)
0
20
40
60
0.000001
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(
A
)
,
Peak Avalan
ch
e Cu
rren
t
DD
D
A
V
BV
I
L
t
-
=
T
A
=25C
T
A
=150C
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Po
w
e
r (
W
)
0.001
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
JA
No
rm
aliz
ed
T
r
an
sien
t
T
h
e
rm
al Resist
an
ce
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=55C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Alpha & Omega Semiconductor, Ltd.
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