Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
15
20
41
50
R
JC
2
2.4
A
Repetitive avalanche energy L=0.3mH
C
135
mJ
Maximum Junction-to-Case
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
20
Pulsed Drain Current
Power Dissipation
B
T
C
=25C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
62
44
120
Avalanche Current
C
30
Power Dissipation
A
T
A
=25C
P
DSM
Continuous Drain
Current
B
Maximum
Units
Parameter
T
C
=25C
T
C
=100C
30
W
Junction and Storage Temperature Range
A
P
D
C
62.5
31
-55 to 175
T
C
=100C
I
D
2.5
W
T
A
=70C
1.6
AOD496
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 62A (V
GS
= 10V)
R
DS(ON)
< 9.5m
(V
GS
= 10V)
R
DS(ON)
< 16m
(V
GS
= 4.5V)
General Description
The AOD496 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications.
Standard Product
AOD496 is Pb-free (meets ROHS & Sony 259
specifications). AOD496L is a Green Product ordering
option. AOD496 and AOD496L are electrically
identical.
D
S
G
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
AOD496
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
0.1
A
V
GS(th)
1
1.9
2.5
V
I
D(ON)
120
A
7.7
9.5
T
J
=125C
11.0
13
16.0
m
g
FS
40
S
V
SD
0.73
1.0
V
I
S
46
A
C
iss
1000
1200
pF
C
oss
340
pF
C
rss
100
pF
R
g
1.3
2.0
Q
g
(10V)
18
23
nC
Q
g
(4.5V)
8.5
nC
Q
gs
3.1
nC
Q
gd
4.8
nC
t
D(on)
5.6
ns
t
r
5.5
ns
t
D(off)
18.5
ns
t
f
5
ns
t
rr
29
ns
Q
rr
24
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
uA
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
m
V
GS
=4.5V, I
D
=20A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.75
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
A: The value of R
JA
is measured with the device in a still air environment with T
A
=25C.
B. The power dissipation P
D
is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin
a maximum junction temperature of TJ(MAX)=175C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
SOA curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
Rev0: May 2006
Alpha & Omega Semiconductor, Ltd.
AOD496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
30
60
90
120
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
I
D
(A)
10V
4.5V
V
GS
=3.5V
7V
4V
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
5
7
9
11
13
15
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.6
0.8
1
1.2
1.4
1.6
-50
-20
10
40
70
100
130
160
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
I
D
=20A
V
GS
=10V
V
GS
=4.5
V
GS
=4.5
V
GS
=10V
5
10
15
20
25
30
2
4
6
8
10
12
14
16
18
20
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=20A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AOD496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
5
10
15
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
300
600
900
1200
1500
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
C
oss
C
rss
0.0
0.1
1.0
10.0
100.0
1000.0
0.01
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
s
10ms
1m
0.1
DC
R
DS(ON)
limited
T
J(Max)
=175C
T
C
=25C
100
V
DS
=15V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
Jc
.R
Jc
R
JC
=2.4C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max
)
=175C
T
C
=25C
Alpha & Omega Semiconductor, Ltd.
AOD496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
70
0.000001
0.00001
0.0001
0.001
0.01
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A),
P
eak Aval
an
ch
e Cu
r
r
e
n
t
0
10
20
30
40
50
60
70
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
o
w
e
r D
i
s
s
i
pa
t
i
on (
W
)
T
A
=25C
current derating
0
20
40
60
80
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
C
u
rre
nt
ra
t
i
ng I
D
(A)
0
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Po
w
e
r
(
W
)
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=50C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
J(Max
)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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