Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
I
AR
A
E
AR
mJ
T
J
, T
STG
C
Thermal Characteristics: n-channel and p-channel
Symbol
Device
Typ
Max
n-ch
17.4
30
C/W
n-ch
50
60
C/W
R
JC
n-ch
4
7.5
C/W
p-ch
16.7
25
C/W
p-ch
40
50
C/W
R
JC
p-ch
2.5
3
C/W
R
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t 10s
40
8
8
20
20
Avalanche Current
C
Pulsed Drain Current
C
-40
20
Drain-Source Voltage
20
Gate-Source Voltage
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
Repetitive avalanche energy L=0.1mH
C
W
10
50
25
Continuous Drain
Current
G
T
C
=25C
I
D
T
C
=100C
R
JA
Maximum Junction-to-Ambient
A
Steady-State
30
T
C
=100C
Power Dissipation
B
T
C
=25C
P
D
Steady-State
Junction and Storage Temperature Range
Maximum Junction-to-Case
B
Steady-State
Maximum Junction-to-Ambient
A
t 10s
-55 to 175
Power Dissipation
A
T
A
=25C
P
DSM
T
A
=70C
2.5
2
1.6
30
1.3
8
-55 to 175
-30
-8
A
W
8
8
AOD606
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 40V -40V
I
D
= 8A (V
GS
=10V) -8A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 33 m
(V
GS
=10V) < 50 m
(V
GS
= -10V)
< 47 m
(V
GS
=4.5V) < 70 m
(V
GS
= -4.5V)
General Description
The AOD606 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications.
Standard product AOD606 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD606L is a Green Product ordering option.
AOD606 and AOD606L are electrically
identical.
G1
D1/D2
S1
G2
S2
n-channel
p-channel
S1 G1 S2 G2
TO-252-4L
D-PAK
Top View
Drain Connected to
Tab
D1/D2
Alpha & Omega Semiconductor, Ltd.
AOD606
Symbol
Min
Typ
Max
Units
BV
DSS
40
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
2.3
3
V
I
D(ON)
30
A
27
33
T
J
=125C
39
52
37
47
m
g
FS
25
S
V
SD
0.76
1
V
I
S
8
A
C
iss
404
pF
C
oss
95
pF
C
rss
37
pF
R
g
2.7
Q
g
(10V)
9.2
nC
Q
g
(4.5V)
4.5
nC
Q
gs
1.6
nC
Q
gd
2.6
nC
t
D(on)
3.5
ns
t
r
6
ns
t
D(off)
13.2
ns
t
f
3.5
ns
t
rr
22.9
ns
Q
rr
18.3
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=10mA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=8A
Reverse Transfer Capacitance
I
F
=8A, dI/dt=100A/s
V
GS
=0V, V
DS
=20V, f=1MHz
SWITCHING PARAMETERS
N-Channel MOSFET Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
,
I
D
=250A
V
DS
=32V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=4.5V, I
D
=6A
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=8A
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=20V, I
D
=8A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Body Diode Reverse Recovery Charge I
F
=8A, dI/dt=100A/s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=20V, R
L
=2.5,
R
GEN
=3
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
Power dissipation P
DSM
is based on R
JA
and the maximum allowed junction temperature of 150C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 0: January 2006
Alpha & Omega Semiconductor, Ltd.
AOD606
N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
20
25
30
35
40
45
50
0
4
8
12
16
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
N
o
r
m
alized O
n
-R
esistance
V
GS
=4.5V
I
D
=6A
V
GS
=10V
I
D
=8A
10
20
30
40
50
60
70
80
90
100
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=8A
25C
125C
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=3.5V
4V
10V
4.5V
5V
Alpha & Omega Semiconductor, Ltd.
AOD606
N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
2
4
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
100
200
300
400
500
600
700
0
5
10
15
20
25
30
35
40
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pacitance (pF)
C
iss
0
40
80
120
160
200
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Pow
e
r (W)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
N
o
r
m
alized Tr
ansient
Ther
m
al R
e
sistance
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175C, T
A
=25C
V
DS
=20V
I
D
=8A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
JC
.R
JC
R
JC
=7.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175C
T
A
=25C
10s
Alpha & Omega Semiconductor, Ltd.
AOD606
N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
JA
N
o
r
m
alized Tr
ansient
Ther
m
al R
e
sistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=60C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
2
4
6
8
10
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A
), P
e
ak A
v
alanche C
ur
r
e
nt
0
5
10
15
20
25
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
Pow
e
r
D
issipation (W)
0
2
4
6
8
10
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
Cu
rre
n
t
ra
ti
n
g
I
D
(A)
DD
D
A
V
BV
I
L
t
-
=
T
A
=25C
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Pow
e
r (W)
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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