Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
I
AR
A
E
AR
mJ
T
J
, T
STG
C
Thermal Characteristics: n-channel and p-channel
Symbol
Device
Typ
Max
n-ch
19
23
C/W
n-ch
47
60
C/W
R
JC
n-ch
4.5
6
C/W
p-ch
19
23
C/W
p-ch
47
60
C/W
R
JC
p-ch
4.5
6
C/W
-40
-18
A
W
-12
-12
40
1.3
18
-55 to 175
-55 to 175
Power Dissipation
A
T
A
=25C
P
DSM
T
A
=70C
2.1
2.1
1.3
Maximum Junction-to-Case
B
Steady-State
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
Steady-State
40
T
C
=100C
Power Dissipation
B
T
C
=25C
P
D
Steady-State
Junction and Storage Temperature Range
Continuous Drain
Current
G
T
C
=25C
I
D
T
C
=100C
Repetitive avalanche energy L=0.1mH
C
W
12.5
25
12.5
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
-30
20
Drain-Source Voltage
20
Gate-Source Voltage
Parameter
Maximum Junction-to-Ambient
A
t 10s
30
12
12
40
25
Avalanche Current
C
Pulsed Drain Current
C
R
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Steady-State
AOD607
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 12A (V
GS
=10V) -12A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 25 m
(V
GS
=10V) < 37 m
(V
GS
= -10V)
< 34 m
(V
GS
=4.5V) < 62 m
(V
GS
= -4.5V)
General Description
The AOD607 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications.
Standard product AOD607 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD607L is a Green Product ordering option.
AOD607 and AOD607L are electrically
identical.
G1
S1
G2
S2
n-channel
p-channel
S1 G1 S2 G2
TO-252-4L
D-PAK
Top View
Drain Connected to
Tab
D1/D2
D1/D2
Alpha & Omega Semiconductor, Ltd.
AOD607
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.7
2.5
V
I
D(ON)
40
A
20
25
T
J
=125C
28
34
27.5
34
m
g
FS
25
S
V
SD
0.75
1
V
I
S
18
A
C
iss
1040
1250
pF
C
oss
180
pF
C
rss
110
pF
R
g
0.7
1.5
Q
g
(10V)
19.8
25
nC
Q
g
(4.5V)
9.8
12.5
nC
Q
gs
2.5
nC
Q
gd
3.5
nC
t
D(on)
4.5
ns
t
r
3.9
ns
t
D(off)
17.4
ns
t
f
3.2
ns
t
rr
19
25
ns
Q
rr
8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=10V, V
DS
=15V, I
D
=12A
Total Gate Charge
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.25
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=12A
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
N-Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=12A, dI/dt=100A/
s
V
GS
=10V, I
D
=12A
Reverse Transfer Capacitance
I
F
=12A, dI/dt=100A/
s
m
V
GS
=4.5V, I
D
=5A
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The Power
dissipation P
DSM
is based on R
JA
and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev 0: March 2006
Alpha & Omega Semiconductor, Ltd.
AOD607
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
10
15
20
25
30
35
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
N
o
r
m
aliz
ed
O
n
-
R
esist
an
ce
V
GS
=10V
V
GS
=4.5V
I
D
=5A
10
20
30
40
50
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=12A
25C
125C
I
D
=12A
Alpha & Omega Semiconductor, Ltd.
AOD607
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts
)
0
250
500
750
1000
1250
1500
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acit
a
n
ce (
p
F
)
C
iss
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Po
w
e
r
(
W
)
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
aliz
ed
T
r
an
sien
t
T
h
e
r
m
al R
esist
an
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
mps
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=12A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=60C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
AOD607
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-0.003
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1.2
-2
-2.4
V
I
D(ON)
-40
A
30
37
T
J
=125C
42
50
50
62
m
g
FS
17
S
V
SD
-0.76
-1
V
I
S
-18
A
C
iss
920
1100
pF
C
oss
190
pF
C
rss
122
pF
R
g
3.6
5
Q
g
(10V)
18.7
23
nC
Q
g
(4.5V)
9.7
11.7
nC
Q
gs
2.54
nC
Q
gd
5.4
nC
t
D(on)
9
13
ns
t
r
25
35
ns
t
D(off)
20
30
ns
t
f
12
18
ns
t
rr
21.4
26
ns
Q
rr
13
16
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-12A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-12A
Reverse Transfer Capacitance
I
F
=-12A, dI/dt=100A/
s
P-Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-4.5V, I
D
=-5A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-12A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V,
R
L
=1.25
, R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-15V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-15V, I
D
=-12A
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
Power dissipation P
DSM
is based on steady-state R
JA
and the maximum allowed junction temperature of 150C. The value in any given
application depends on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB or heatsink allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev0 : March 2006
Alpha & Omega Semiconductor, Ltd.
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