Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
19.5
25
48
60
R
JC
1
1.5
15
T
A
=70C
12
A
Repetitive avalanche energy L=0.3mH
C
135
mJ
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Case
C
Steady-State
Continuous Drain
Current
G
T
A
=25C
I
DSM
T
A
=25C
P
DSM
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
20
Pulsed Drain Current
Power Dissipation
B
T
C
=25C
A
I
D
Maximum Junction-to-Ambient
A
Steady-State
85
70
200
Avalanche Current
C
30
Power Dissipation
A
2.5
W
Continuous Drain
Current
B
Maximum
Units
Parameter
T
C
=25C
G
T
C
=100C
30
T
A
=70C
1.6
W
Junction and Storage Temperature Range
P
D
C
100
50
-55 to 175
T
C
=100C
AOL1418
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 6.5m
(V
GS
= 10V)
R
DS(ON)
< 10.5m
(V
GS
= 4.5V)
General Description
The AOL1418 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOL1418 is Pb-free (meets ROHS
& Sony 259 specifications). AOL1418L is a Green
Product ordering option. AOL1418 and AOL1418L
are electrically identical.
G
D
S
Ultra
SO-8
TM
Top View
Bottom tab
connected to
drain
Fits SOIC8
footprint !
S
G
D
Alpha & Omega Semiconductor, Ltd.
AOL1418
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
0.005
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
2.2
3
V
I
D(ON)
100
A
5
6.5
T
J
=125C
6.7
8.1
8.3
10.5
m
g
FS
60
S
V
SD
0.72
1
V
I
S
85
A
C
iss
1320
1600
pF
C
oss
533
pF
C
rss
154
pF
R
g
0.95
1.5
Q
g
(10V)
26
32
nC
Q
g
(4.5V)
13.3
16.2
nC
Q
gs
3.2
nC
Q
gd
6.6
nC
t
D(on)
7.2
10
ns
t
r
12.5
18
ns
t
D(off)
22
33
ns
t
f
6
9
ns
t
rr
29.7
36
ns
Q
rr
29
36
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=15V, I
D
=20A
Total Gate Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.75
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
m
V
GS
=4.5V, I
D
=20A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=20A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device in a still air environment with T A =25C.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve
provides a single pulse rating.
Rev1: Dec 2005
Alpha & Omega Semiconductor, Ltd.
AOL1418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3V
3.5V
10V
4.0V
0
10
20
30
40
50
60
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
4
5
6
7
8
9
10
0
10
20
30
40
50
60
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
N
o
r
m
aliz
ed
O
n
-
R
esist
an
ce
V
GS
=10V
V
GS
=4.5V
4
8
12
16
20
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=20A
25C
125C
I
D
=20A
Alpha & Omega Semiconductor, Ltd.
AOL1418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
5
10
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts
)
0
400
800
1200
1600
2000
2400
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acit
a
n
ce (
p
F
)
C
iss
0
100
200
300
400
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
Jc
N
o
r
m
aliz
ed
T
r
an
sien
t
T
h
e
r
m
al R
esist
an
ce
C
oss
C
rss
0.1
1
10
100
1000
0.1
1
10
100
V
DS
(Volts)
I
D
(A
mps
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note H)
100
s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175C
T
A
=25C
V
DS
=15V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JC
=1.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
AOL1418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
0.00001
0.0001
0.001
0.01
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(
A
)
,
P
eak A
valan
ch
e C
u
r
r
en
t
0
30
60
90
120
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
o
w
e
r
D
i
s
s
i
pa
ti
on (W
)
T
A
=25C
0
20
40
60
80
100
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
C
u
r
r
e
n
t r
a
ti
ng I
D
(A
)
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Po
w
e
r (
W
)
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
JA
N
o
r
m
aliz
ed
T
r
an
sien
t
T
h
er
m
a
l R
esist
an
ce
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=60 C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Alpha & Omega Semiconductor, Ltd.
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