Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
18
25
49
60
R
JC
2.5
4
A
T
A
=70C
11
Continuous Drain
Current
H
T
A
=25C
I
DSM
14
A
Repetitive avalanche energy L=0.3mH
C
135
mJ
Maximum Junction-to-Case
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
20
Pulsed Drain Current
Power Dissipation
B
T
C
=25C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
50
34
150
Avalanche Current
C
30
Power Dissipation
A
T
A
=25C
P
DSM
Continuous Drain
Current
B
Maximum
Units
Parameter
T
C
=25C
T
C
=100C
B
25
W
Junction and Storage Temperature Range
A
P
D
C
38
13
-55 to 175
T
C
=100C
I
D
2.1
W
T
A
=70C
1
AOL1434
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 25V
I
D
= 50A (V
GS
= 10V)
R
DS(ON)
<6.3 m
(V
GS
= 10V)
R
DS(ON)
< 10 m
(V
GS
= 4.5V)
General Description
The AOL1434 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product AOL1434 is Pb-free (meets ROHS & Sony
259 specifications). AOL1434L is a Green Product
ordering option. AOL1434 and AOL1434L are
electrically identical.
Ultra
SO-8
TM
Top View
Bottom tab
connected to
drain
Fits SOIC8
footprint !
S
G
D
G
D
S
Alpha & Omega Semiconductor, Ltd.
AOL1434
Symbol
Min
Typ
Max
Units
BV
DSS
25
V
1
T
J
=55C
5
I
GSS
0.1
A
V
GS(th)
0.8
1.4
2.5
V
I
D(ON)
150
A
5.2
6.3
T
J
=125C
7.8
9.4
7.8
10
m
g
FS
49
S
V
SD
0.74
1.0
V
I
S
50
A
C
iss
2050
2460
pF
C
oss
485
pF
C
rss
280
pF
R
g
0.86
1.5
Q
g
(10V)
34
41
nC
Q
g
(4.5V)
17
22
nC
Q
gs
5
nC
Q
gd
3.5
nC
t
D(on)
7.5
ns
t
r
11
ns
t
D(off)
27
ns
t
f
8
ns
t
rr
30
36
ns
Q
rr
19
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=30A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
m
V
GS
=4.5V, I
D
=20A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=12.5V,
R
L
=0.68
, R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
Gate Drain Charge
V
GS
=0V, V
DS
=12.5V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=12.5V, I
D
=20A
A: The value of R
JA
is measured with the device in a still air environment with T
A
=25C.
B. The power dissipation P
D
is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin
a maximum junction temperature of TJ(MAX)=175C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
SOA curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
Rev0: Mar 2006
Alpha & Omega Semiconductor, Ltd.
AOL1434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.4
494
593
692
830
193
18
59
142
0
10
20
30
40
50
60
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
2
4
6
8
10
0
10
20
30
40
50
60
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(O
N)
(m
)
0.00001
0.0001
0.001
0.01
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
rm
aliz
ed
O
n
-
R
esist
an
ce
V
GS
=10V, 20A
V
GS
=4.5V, 20A
4
6
8
10
12
3
4
5
6
7
8
9
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=10V
I
D
=20A
25C
125C
0
50
100
150
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=2.5
3.5V
10V
6V
4.5V
3.0V
V
GS
=4.5V
Alpha & Omega Semiconductor, Ltd.
AOL1434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.4
494
593
692
830
193
18
59
142
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts
)
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
acit
a
n
ce (
p
F
)
C
iss
0
40
80
120
160
200
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
No
rm
aliz
ed
T
r
an
sien
t
T
h
e
rm
al Resist
an
ce
C
oss
C
rss
V
DS
=12.5V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
JC
.R
JC
R
JC
=4C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175C
T
C
=25C
0.1
1
10
100
1000
0.1
1
10
100
V
DS
(Volts)
I
D
(Amps
)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
s
100
s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175C, T
C
=25C
Alpha & Omega Semiconductor, Ltd.
AOL1434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.4
494
593
692
830
193
18
59
142
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
JA
No
rm
aliz
ed
T
r
an
sien
t
T
h
e
rm
al Resist
an
ce
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=60C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
20
30
40
50
60
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(
A
)
,
Peak Avalan
ch
e Cu
rren
t
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
o
we
r
Di
s
s
i
pa
ti
on (W
)
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
C
u
rren
t
rat
i
n
g
I
D
(A)
T
A
=25C
0
10
20
30
40
50
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Po
w
e
r (
W
)
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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