Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
19.6
25
48
60
R
JC
1
1.5
I
DSM
17
A
T
A
=70C
13
Maximum Junction-to-Ambient
A
Steady-State
C/W
P
DSM
2.1
T
A
=70C
1.3
-55 to 175
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation
A
T
A
=25C
Power Dissipation
B
T
C
=25C
Continuous Drain
Current
G
T
A
=25C
Maximum Junction-to-Case
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
P
D
Avalanche Current
C
T
C
=100C
Junction and Storage Temperature Range
Repetitive avalanche energy L=0.1mH
C
Continuous Drain
Current
B,G
Maximum
Units
Parameter
T
C
=25C
G
T
C
=100C
B
30
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
Drain-Source Voltage
V
20
30
A
85
73
A
I
D
200
mJ
W
50
C
100
W
45
AOL1444
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 4.3m
(V
GS
= 10V)
R
DS(ON)
< 6.3m
(V
GS
= 4.5V)
General Description
The AOL1444 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion.
Standard Product AOL1444 is
Pb-free (meets ROHS & Sony 259 specifications).
AOL1444L is a Green Product ordering option.
AOL1444 and AOL1444L are electrically identical.
G
D
S
Ultra
SO-8
TM
Top View
Bottom tab
connected to
drain
Fits SOIC8
footprint !
S
G
D
Alpha & Omega Semiconductor, Ltd.
AOL1444
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
0.005
1
T
J
=55C
5
I
GSS
100
nA
V
GS(t
1
.45
1.8
3
V
I
D(ON)
200
A
3.2
4.3
T
J
=125C
4.3
5.2
4.9
6.3
m
g
FS
85
S
V
SD
0.7
1
V
I
S
85
A
C
iss
6070
7000
pF
C
oss
638
pF
C
rss
375
pF
R
g
0.45
0.6
Q
g
(10V)
96.4
115
nC
Q
g
(4.5V)
46.4
55
nC
Q
gs
13.6
nC
Q
gd
15.6
nC
t
D(on)
15.7
21
ns
t
r
14.2
21
ns
t
D(off)
55.5
75
ns
t
f
14
21
ns
t
rr
31
38
ns
Q
rr
24
29
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
m
V
GS
=4.5V, I
D
=20A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.75
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=4.5V, V
DS
=15V, I
D
=20A
A: The value of R
JA
is measured with the device in a still air environment with T A =25C.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175C.
G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
curve provides a single pulse rating. Rev0. Dec 2005
Alpha & Omega Semiconductor, Ltd.
AOL1444
T
C
=100C
T
A
=25C
-55 to 175
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
I
D
(A
)
V
GS
=3V
10V
3.5V
4.5V
0
10
20
30
40
50
60
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
20
40
60
80
100
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
aliz
ed
On
-R
esistan
ce
V
GS
=10V
V
GS
=4.5V
2
4
6
8
10
12
14
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=20A
25C
125C
I
D
=20A
Alpha & Omega Semiconductor, Ltd.
AOL1444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
T
C
=100C
T
A
=25C
-55 to 175
0
2
4
6
8
10
0
20
40
60
80
100
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
1000
2000
3000
4000
5000
6000
7000
8000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
200
400
600
800
1000
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
C
rss
0.1
1
10
100
1000
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175C
T
C
=25C
10
s
V
DS
=15V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JC
.R
JC
R
JC
=1.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175C
T
C
=25C
Alpha & Omega Semiconductor, Ltd.
AOL1444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
0.00001
0.0001
0.001
0.01
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A
), P
eak A
valan
ch
e C
u
r
r
en
t
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
o
wer
D
i
ssip
at
io
n
(
W
)
T
A
=25C
0
20
40
60
80
100
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
C
u
rre
n
t
ra
t
i
n
g
I
D
(A
)
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Po
w
e
r (
W
)
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=60C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Alpha & Omega Semiconductor, Ltd.
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