Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
Typ
Max
70
90
100
125
R
JL
63
80
Symbol
Typ
Max
49
75
81
100
R
JL
37
45
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter Max
n-channel
Drain-Source Voltage
20
4.2
-20
Gate-Source Voltage
8
8
-3.4
A
T
A
=70C
3.2
-2.7
Pulsed Drain Current
B
15
-15
Continuous Drain
Current
A
T
A
=25C
I
D
Power Dissipation
T
A
=25C
P
D
1.4
1.7
W
T
A
=70C
0.9
1.1
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Thermal Characteristics: n-channel
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
Steady-State
C/W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics: p-channel
Maximum Junction-to-Lead
C
Steady-State
C/W
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
AON4602
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 20V -20V
I
D
= 4.2A -3.4A (V
GS
= 4.5V)
R
DS(ON)
< 50m
< 90m
(V
GS
= 4.5V)
R
DS(ON)
< 63m < 120m
(V
GS
= 2.5V)
R
DS(ON)
< 87m < 160m
(V
GS
= 1.8V)
General Description
The AON4602 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AON4602 is Pb-free (meets ROHS
& Sony 259 specifications). AON4602L is a Green
Product ordering option. AON4602 and AON4602L are
electrically identical.
DFN
3X2
G2
S2
G1
S1
D2
D2
D1
D1
1
2
3
4
8
7
6
5
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
AON4602
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
0.4
0.7
1
V
I
D(ON)
15
A
41
50
T
J
=125C
58
70
52
63
m
67
87
m
g
FS
11
S
V
SD
0.8
1
V
I
S
2
A
C
iss
436
pF
C
oss
66
pF
C
rss
44
pF
R
g
3
Q
g
6.2
nC
Q
gs
1.6
nC
Q
gd
0.5
nC
t
D(on)
5.5
ns
t
r
6.3
ns
t
D(off)
40
ns
t
f
12.7
ns
t
rr
12.3
ns
Q
rr
3.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=4A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=4.2A
Reverse Transfer Capacitance
I
F
=4A, dI/dt=100A/
s
n-channel Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=16V, V
GS
=0V
V
DS
=0V, V
GS
=8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=2.5V, I
D
=3.7A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=4.2A
V
GS
=1.8V, I
D
=3.2A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=5V, V
DS
=10V, R
L
=2.7
,
R
GEN
=6
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=4.2A
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=10V, f=1MHz
Gate Drain Charge
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t
10s
thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The SOA curve provides a single pulse rating.
Rev0 : Jan. 2006
Alpha & Omega Semiconductor, Ltd.
AON4602
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
4
8
12
16
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=1.5V
2V
2.5V
8V
3V
4.5V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
25C
125C
V
DS
=5V
20
40
60
80
100
0
4
8
12
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
V
GS
=1.8V
V
GS
=2.5V
V
GS
=4.5V
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
V
GS
=1.8
V
GS
=4.5V
V
GS
=2.5
20
30
40
50
60
70
80
90
100
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
I
D
=4.2A
25
125C
I
D
=4.2A
Alpha & Omega Semiconductor, Ltd.
AON4602
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
2
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
200
400
600
800
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
C
oss
C
rss
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10
s
V
DS
=10V
I
D
=4.2A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=90C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
AON4602
Symbol
Min
Typ
Max
Units
BV
DSS
-20
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-0.3
-0.63
-1
V
I
D(ON)
-15
A
73
90
T
J
=125C
102
125
95
120
m
123
160
m
g
FS
4
7
S
V
SD
-0.83
-1
V
I
S
-2
A
C
iss
540
pF
C
oss
72
pF
C
rss
49
pF
R
g
12
Q
g
6.1
nC
Q
gs
0.6
nC
Q
gd
1.6
nC
t
D(on)
10
ns
t
r
12
ns
t
D(off)
44
ns
t
f
22
ns
t
rr
21
ns
Q
rr
7.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-3.8A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-1.8V, I
D
=-1.5A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-3.4A
Reverse Transfer Capacitance
p-channel MOSFET Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-16V, V
GS
=0V
V
DS
=0V, V
GS
=8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-2.5V, I
D
=-2.5A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-3.4A
I
F
=-3.8A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-3.8A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-4.5V, V
DS
=-10V, R
L
=2.6
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 0. Jan. 2006
Alpha & Omega Semiconductor, Ltd.
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