Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
30
40
61
75
R
JC
4.5
6
Maximum Junction-to-Lead
B
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Steady-State
C/W
t 10s
R
JA
C/W
A
45
Junction and Storage Temperature Range
C
-55 to 150
T
A
=70C
1.0
Continuous Drain
Current
.
R
JA
=75C/W
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
I
D
8
V
Power Dissipation
A
R
JA
=75C/W
T
A
=25C
W
P
DSM
1.7
Absolute Maximum Ratings T
A
=25C unless otherwise noted
6
Pulsed Drain Current
C
30
12
Gate-Source Voltage
Drain-Source Voltage
AON5802
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
V
DS
(V) = 30V
I
D
= 8 A (V
GS
= 10V)
R
DS(ON)
< 17 m
(V
GS
= 10V)
R
DS(ON)
< 20 m
(V
GS
= 4.5V)
R
DS(ON)
< 22 m (V
GS
= 4.0V)
R
DS(ON)
< 24 m (V
GS
= 3.1V)
R
DS(ON)
< 30 m
(V
GS
= 2.5V)
ESD Rating: 2000V HBM
General Description
The AON5800 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V V
GS(MAX)
rating. It is
ESD protected. This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its common-drain
configuration.
Standard Product AON5802 is Pb-free (meets
ROHS & Sony 259 specifications). AON5802L is a Green Product
ordering option. AON5802 and AON5802L are electrically
identical.
Top View
Bottom View
G1
G2
S1
S2
D
Alpha & Omega Semiconductor, Ltd.
AON5802
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
10
A
BV
GSO
12
V
V
GS(th)
0.6
1
1.5
V
I
D(ON)
30
A
14
17
T
J
=125C
23
28
17
20
18
22
20
24
23
30
g
FS
37
S
V
SD
0.5
0.76
0.9
V
I
S
4.5
A
C
iss
869
pF
C
oss
129
pF
C
rss
104
pF
R
g
1.5
Q
g
(4.5V)
10.7
nC
Q
gs
2.1
nC
Q
gd
4.3
nC
t
D(on)
3.4
ns
t
r
11.2
ns
t
D(off)
27.2
ns
t
f
6.7
ns
t
rr
24.6
ns
Q
rr
12.9
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=8A
Reverse Transfer Capacitance
I
F
=8A, dI/dt=100A/
s
V
GS
=0V, V
DS
=15V, f=1MHz
Gate-Source Breakdown Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
,
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, I
G
=250uA
V
DS
=0V, V
GS
=10V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=8A
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=3A
V
GS
=4.0V, I
D
=4A
V
GS
=3.1V, I
D
=4A
m
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
V
GS
=4.5V, V
DS
=15V, I
D
=8A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Body Diode Reverse Recovery Charge I
F
=8A, dI/dt=100A/
s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.25
,
R
GEN
=3
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev2: June 2005
Alpha & Omega Semiconductor, Ltd.
AON5802
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
0
10
20
30
40
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS(
O
N)
(m
)
V
GS
=2.5V
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
N
o
r
m
alized O
n
-R
esistance
V
GS
=4.5V
I
D
=6A
V
GS
=10V
I
D
=8A
V
GS
=2.5V
I
D
=3A
0
10
20
30
40
50
60
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=8A
25C
125C
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=2V
2.5V
10V
4V
3V
Alpha & Omega Semiconductor, Ltd.
AON5802
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
6
7
8
9
10
0
4
8
12
16
20
24
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
200
400
600
800
1000
1200
1400
1600
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pacitance (pF)
C
iss
0
40
80
120
160
200
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note E)
Pow
e
r (W)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Z
JC
N
or
m
aliz
ed Tr
ansient
Ther
m
al R
e
sistance
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150C, T
A
=25C
10ms
100ms
1s
10s
V
DS
=15V
I
D
=8A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
JC
.R
JA
R
JA
=75C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10s
Alpha & Omega Semiconductor, Ltd.
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