Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
V
DS
I
DM
T
J
, T
STG
-30
20
Gate-Source Voltage
A
Continuous Drain
Current
A
T
A
=25C
I
D
T
A
=70C
Pulsed Drain Current
B
W
7.5
6
30
2.5
1.6
-5.3
-6.6
2.5
1.6
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
30
-30
20
Drain-Source Voltage
T
A
=70C
Power Dissipation
T
A
=25C
P
D
Units
V
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Parameter
Maximum Schottky
Reverse Voltage
30
A
T
A
=70C
2.7
Pulsed Forward Current
B
20
Continuous Forward
Current
A
T
A
=25C
I
D
4
W
T
A
=70C
1.6
Junction and Storage Temperature Range
-55 to 150
C
Power Dissipation
A
T
A
=25C
P
D
2.5
AOP601
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.5A (VGS = 10V) -6.6A
R
DS(ON)
< 28m
< 35m
(V
GS
=
-10V)
< 43m
< 58m
(V
GS
=
-4.5V)
Schottky
V
DS
=30V, I
F
=3A, V
F
<0.5V@1A
General Description
The AOP601 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications. A
Schottky diode in parallel with the n-channel FET
reduces body diode related losses. Standard
Product AOP601 is Pb-free (meets ROHS & Sony
259 specifications). AOP601L is a Green Product
ordering option. AOP601 and AOP601L are
electrically identical.
D2
G2
S2
G1
D1
S1
K
A
G1
S1/A
G2
S2
D1/K
D1/K
D2
D2
1
2
3
4
8
7
6
5
N-ch
P-ch
PDIP-8
Alpha & Omega Semiconductor, Ltd.
AOP601
Symbol
Typ
Max
40
50
67
80
R
JL
33
40
Symbol
Typ
Max
38
50
66
80
R
JL
30
40
Symbol
Typ
Max
42
50
70
80
R
JL
34
40
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
Thermal Characteristics: n-channel
Thermal Characteristics: p-channel
Maximum Junction-to-Lead
C
Steady-State
C/W
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
Steady-State
C/W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics: Schottky
Maximum Junction-to-Lead
C
Steady-State
C/W
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 3: Sept 2005
Alpha Omega Semiconductor, Ltd.
AOP601
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.8
3
V
I
D(ON)
30
A
22.6
28
T
J
=125C
33
43
m
g
FS
12
16
S
V
I
S
4
A
C
iss
680
pF
C
oss
102
pF
C
rss
77
pF
R
g
3
Q
g
(10V)
13.84
nC
Q
g
6.74
nC
Q
gs
1.82
nC
Q
gd
3.2
nC
t
D(on)
4.6
ns
t
r
4.1
ns
t
D(off)
20.6
ns
t
f
5.2
ns
t
rr
16.5
ns
Q
rr
7.8
nC
SCHOTTKY PARAMETERS
V
F
0.45
0.5
V
0.007
0.05
3.2
10
12
20
C
T
37
pF
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=7.5A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
Gate-Body leakage current
V
DS
=0V, V
GS
=20V
Output Capacitance. (Schottky+FET)
Maximum Body-Diode+Schottky Continuous Current
DYNAMIC PARAMETERS
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
n-channel MOSFET Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
A
m
V
GS
=4.5V, I
D
=6.0A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=10V, V
DS
=5V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=7.5A
Forward Transconductance
V
DS
=5V, I
D
=7.5A
V
SD
Turn-Off DelayTime
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
V
GS
=4.5V, V
DS
=15V, I
D
=7.5A
V
GS
=10V, V
DS
=15V, R
L
=2.0
,
R
GEN
=6
Schottky+ Body Diode Forward Voltage I
S
=1A
Reverse Transfer Capacitance
Turn-On DelayTime
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Input Capacitance
mA
V
R
=30V, T
J
=125C
V
R
=30V, T
J
=150C
Turn-Off Fall Time
Forward Voltage Drop
I
F
=1.0A
Turn-On Rise Time
Body Diode Reverse Recovery time
Body Diode Reverse Recovery charge
0.45
0.5
V
GS
=0V, V
DS
=15V, f=1MHz
I
F
=7.5A, dI/dt=100A/
s
Junction Capacitance
V
R
=15V
I
rm
Maximum reverse leakage current
V
R
=30V
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
Rev 3: Sept 2005
Alpha Omega Semiconductor, Ltd.
AOP601
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
10
20
30
40
50
60
0
5
10
15
20
I
D
(Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body diode characteristics
MOSFET+Schottky
I
S
Amps
125C
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0
50
100
150
200
Temperature ( C)
Figure 4: On-Resistance vs. Junction Temperature
No
rm
aliz
ed
O
n
-
R
esist
an
ce
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
60
70
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=7.5A
125C
25C
25C
I
D
=7.5A
5V
6V
Alpha Omega Semiconductor, Ltd.
AOP601
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
0
2
4
6
8
10
0
2
4
6
8
10
12
14
Q
g
(nC)
Figure 7: Gate-Charge characteristics
V
GS
(V
ol
ts
)
0
100
200
300
400
500
600
700
800
900
1000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
acit
a
n
ce (
p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r W
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
rm
aliz
ed
T
r
an
sien
t
T
h
e
rm
al Resist
an
ce
C
oss
(FET+Schottky)
C
rss
0.1
1
10
100
0.1
1
10
100
V
DS
(Volts)
I
D
(Amps
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=7.5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=50C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
f=1MHz
V
GS
=0V
10
s
Alpha Omega Semiconductor, Ltd.
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