Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
Device
Typ
Max Units
n-ch
37
50
C/W
n-ch
74
90
C/W
R
JL
n-ch
28
40
C/W
p-ch
35
50
C/W
p-ch
73
90
C/W
R
JL
p-ch
32
40
C/W
Thermal Characteristics: n-channel and p-channel
-55 to 150
-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
60
-60
20
Drain-Source Voltage
20
Gate-Source Voltage
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
W
4.7
3.8
20
2.5
1.6
-2.9
-3.5
2.5
1.6
A
Continuous Drain
Current
A
T
A
=25C
I
D
T
A
=70C
Pulsed Drain Current
B
R
JA
Maximum Junction-to-Ambient
A
Steady-State
-20
T
A
=70C
Power Dissipation
T
A
=25C
P
D
Steady-State
Junction and Storage Temperature Range
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t 10s
AOP609
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 60V -60V
I
D
= 4.7A (V
GS
=10V) -3.5A (V
GS
=-10V)
R
DS(ON)
R
DS(ON)
< 60m
(V
GS
=10V) < 115m
(V
GS
=-10V)
< 75m
(V
GS
=4.5V) < 140m
(V
GS
=-4.5V)
ESD Rating: 1500V HBM 3000V HMB
General Description
The AOP609 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs
may be used in H-bridge, Inverters and other
applications.
Standard Product AOP609 is Pb-
free (meets ROHS & Sony 259 specifications).
AOP609L is a Green Product ordering option.
AOP609 and AOP609L are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
PDIP-8
n-channel
p-channel
D1
S1
G1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
AOP609
Symbol
Min
Typ
Max
Units
BV
DSS
60
V
1
T
J
=55C
5
I
GSS
250
A
V
GS(th)
1.5
2.4
3
V
I
D(ON)
20
A
49
60
T
J
=125C
65
57
75
m
g
FS
17
S
V
SD
0.78
1
V
I
S
3.5
A
C
iss
474
570
pF
C
oss
157
pF
C
rss
60
pF
R
g
1.65
2
Q
g
(10V)
5.1
7
nC
Q
g
(4.5V)
2.5
3
nC
Q
gs
1
nC
Q
gd
1.4
nC
t
D(on)
5.4
ns
t
r
5.5
ns
t
D(off)
17.2
ns
t
f
2.9
ns
t
rr
25.4
35
ns
Q
rr
29.4
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=0V, V
DS
=30V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
Gate resistance
Output Capacitance
I
S
=1A,V
GS
=0V
V
GS
=10V, I
D
=4.7A
Diode Forward Voltage
V
GS
=10V, V
DS
=30V, R
L
=6
,
R
GEN
=3
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=4.7A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
m
V
GS
=4.5V, I
D
=3.0A
V
DS
=5V, I
D
=4.7A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=10V, V
DS
=5V
A
Gate-Body leakage current
V
DS
=0V, V
GS
= 20V
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=48V, V
GS
=0V
N Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Body Diode Reverse Recovery Charge
Total Gate Charge
I
F
=4.7A, dI/dt=100A/
s
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=4.7A, dI/dt=100A/
s
Input Capacitance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 1 : December 2005
Alpha & Omega Semiconductor, Ltd.
AOP609
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3.5V
4.0V
10.0V
5.0V
4.5V
0
5
10
15
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
20
30
40
50
60
70
80
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25
0
25
50
75 100 125 150 175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
aliz
ed
On
-R
esistan
ce
V
GS
=10V
V
GS
=4.5
I
D
=3A
I
D
=4.7A
40
60
80
100
120
140
160
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=4.7A
25C
125
Alpha & Omega Semiconductor, Ltd.
AOP609
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
0
2
4
6
8
10
0
1
2
3
4
5
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
200
400
600
800
0
10
20
30
40
50
60
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pa
c
i
ta
nc
e
(pF)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
T
J(Max)
=150C
T
A
=25C
R
DS(ON)
limited
V
DS
=30V
I
D
= 4.7A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=50C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
AOP609
Symbol
Min
Typ
Max
Units
BV
DSS
-60
V
-1
T
J
=55C
-5
I
GSS
100
A
V
GS(th)
-1.5
-1.8
-3
V
I
D(ON)
-20
A
95
115
T
J
=125C
133
112
140
m
g
FS
9
S
V
SD
-0.77
-1
V
I
S
-3.5
A
C
iss
897
1080
pF
C
oss
88
pF
C
rss
36
pF
R
g
7.2
9
Q
g
(10V)
8.1
10
nC
Q
g
(4.5V)
3.9
5
nC
Q
gs
1.4
nC
Q
gd
1.7
nC
t
D(on)
9
ns
t
r
7.2
ns
t
D(off)
35
ns
t
f
25.5
ns
t
rr
25.8
35
ns
Q
rr
28.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
P-Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=-250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-48V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=20V
m
V
GS
=-4.5V, I
D
=-2.8A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
On state drain current
V
GS
=-10V, V
DS
=-5V
V
DS
=-5V, I
D
=-3.5A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
=-10V, I
D
=-3.5A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=-30V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-30V, I
D
=-3.5A
Turn-On DelayTime
V
GS
=-10V, V
DS
=-30V, R
L
=8.1
,
R
GEN
=3
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=-3.5A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=-3.5A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev1:Aug 2005
Alpha & Omega Semiconductor, Ltd.
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