Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
14.2
20
39
50
R
JC
0.8
1.5
W
Junction and Storage Temperature Range
A
P
D
C
100
50
-55 to 175
T
C
=100C
I
D
Continuous Drain
Current
B,G
Maximum
Units
Parameter
T
C
=25C
G
T
C
=100C
B
30
Maximum Junction-to-Ambient
A
Steady-State
110
88
200
Avalanche Current
C
30
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
20
Pulsed Drain Current
Power Dissipation
B
T
C
=25C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Case
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
A
Repetitive avalanche energy L=0.1mH
C
112
mJ
AOT424
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 110A (VGS = 10V)
R
DS(ON)
< 4m
(V
GS
= 10V)
R
DS(ON)
< 5.5m
(V
GS
= 4.5V)
General Description
The AOT424 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
Standard Product AOT424 is Pb-free (meets ROHS
& Sony 259 specifications). AOT424L is a Green
Product ordering option. AOT424 and AOT424L are
electrically identical.
G
D
S
G D S
TO-220
Alpha & Omega Semiconductor, Ltd.
AOT424
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
2
3
V
I
D(ON)
110
A
3
4
T
J
=125C
4.7
6
4.3
5.5
m
g
FS
106
S
V
SD
0.72
1
V
I
S
85
A
C
iss
3200
3840
pF
C
oss
590
pF
C
rss
414
pF
R
g
0.54
0.7
Q
g
(10V)
59.6
72
nC
Q
g
(4.5V)
30.4
37
nC
Q
gs
9.5
nC
Q
gd
19.8
nC
t
D(on)
12.5
ns
t
r
35.5
ns
t
D(off)
40
ns
t
f
32.5
ns
t
rr
35.3
42
ns
Q
rr
30.7
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=10V, V
DS
=15V, I
D
=30A
Total Gate Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.5
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
m
V
GS
=4.5V, I
D
=30A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=30A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=30A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=30A
Reverse Transfer Capacitance
I
F
=30A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The Power
dissipation P
DSM
is based on steady-state R
JA
and the maximum allowed junction temperature of 150C. The value in any given application
depends on the user's specific board design, and the maximum temperature
of 175C may be used if the PCB or heatsink allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
AOT424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3V
3.5V
10V
4.0V
0
10
20
30
40
50
60
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
2
3
4
5
0
10
20
30
40
50
60
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
V
GS
=10V
V
GS
=4.5V
I
D
=30A
0
2
4
6
8
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=30A
25C
125C
I
D
=30A
Alpha & Omega Semiconductor, Ltd.
AOT424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
10
20
30
40
50
60
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
1000
2000
3000
4000
5000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Po
w
e
r (
W
)
C
oss
C
rss
0.1
1
10
100
1000
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=175C
T
A
=25C
V
DS
=15V
I
D
=30A
T
J(Max)
=175C
T
A
=25C
10
s
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JC
.R
JC
R
JC
=1.5C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse
T
on
T
P
D
Single Pulse
Alpha & Omega Semiconductor, Ltd.
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