Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
R
JA
60
75
R
JC
0.7
1.3
W
Maximum Junction-to-Case
B
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
Steady-State
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
30
Gate-Source Voltage
Drain-Source Voltage
75
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25C
Continuous Drain
Current
G
Maximum
Units
Parameter
T
C
=25C
T
C
=100C
I
D
80
57
300
Junction and Storage Temperature Range
A
P
D
C
115
58
-55 to 175
T
C
=100C
Avalanche Current
C
60
Repetitive avalanche energy L=0.1mH
C
180
A
mJ
AOT428
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 75V
I
D
= 80A (V
GS
= 10V)
R
DS(ON)
< 11 m
(V
GS
= 10V)
General Description
The AOT428 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard Product AOT428 is Pb-free (meets ROHS &
Sony 259 specifications). AOT428L is a Green
Product ordering option. AOT428 and AOT428L are
electrically identical.
G
D
S
Top View
Drain Connected
to Tab
G D S
TO-220
Alpha & Omega Semiconductor, Ltd.
AOT428
Symbol
Min
Typ
Max
Units
BV
DSS
75
V
0.02
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
2
3.4
4.5
V
I
D(ON)
200
A
9.1
11
T
J
=125C
15.5
20
g
FS
100
S
V
SD
0.7
1
V
I
S
55
A
C
iss
3790
4900
pF
C
oss
321
420
pF
C
rss
222
290
pF
R
g
1.25
1.5
Q
g
(10V)
65
85
nC
Q
gs
23
30
nC
Q
gd
23.5
31
nC
t
D(on)
20
26
ns
t
r
48
63
ns
t
D(off)
30
40
ns
t
f
10
13
ns
t
rr
43
56
ns
Q
rr
88
114
nC
11
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250uA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=30A
Reverse Transfer Capacitance
I
F
=30A, dI/dt=100A/
s
V
GS
=0V, V
DS
=30V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
,
I
D
=250
A
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=30V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=30A
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=30A
Gate Source Charge
Gate Drain Charge
Body Diode Reverse Recovery Charge I
F
=30A, dI/dt=100A/
s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=30V, R
L
=1
,
R
GEN
=3
A: The value of R
JA
is measured with the device in a still air environment with T
A
=25C.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175C.
G. The maximum current rating is limited by bond-wires.
Rev 0: Sept 2005
Alpha & Omega Semiconductor, Ltd.
AOT428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V
GS
=10V, I
D
=30A
20
26
48
63
30
40
10
13
0
20
40
60
80
2
3
4
5
6
7
8
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
7
8
9
10
11
12
0
20
40
60
80
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(m
)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
25
50
75
100
125
150
175
200
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
Norm
al
i
z
ed On-Resi
stance
V
GS
=10V
I
D
=30A
4
8
12
16
20
6
8
10
12
14
16
18
20
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(m
)
25C
125C
V
DS
=5V
V
GS
=10V
I
D
=30A
25C
125C
0
50
100
150
200
250
300
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=6V
20V
10V
7V
8V
Alpha & Omega Semiconductor, Ltd.
AOT428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V
GS
=10V, I
D
=30A
20
26
48
63
30
40
10
13
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
70
80
90 100
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
1
2
3
4
5
6
0
15
30
45
60
75
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capaci
tance (nF)
C
iss
100
300
500
700
900
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
Norm
al
i
z
ed Transi
ent
Therm
al
Resi
stance
C
oss
C
rss
V
DS
=30V
I
D
=30A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JC
.R
JC
R
JC
=1.3C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175C
T
A
=25C
0.1
1
10
100
1000
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
s
100
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150C, T
A
=25C
100m
1s
10s
Alpha & Omega Semiconductor, Ltd.
AOT428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V
GS
=10V, I
D
=30A
0
20
40
60
80
100
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A),
P
eak Aval
anche Current
0
30
60
90
120
150
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
o
wer D
i
ssi
pat
i
on (
W
)
0
20
40
60
80
100
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
C
u
rrent
rat
i
ng I
D
(A)
DD
D
A
V
BV
I
L
t
-
=
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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