Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
R
JA
115
140
R
JC
4.5
7.5
A
mJ
Avalanche Current
C
10
Repetitive avalanche energy L=0.1mH
C
15
10
20
Junction and Storage Temperature Range
A
P
D
C
20
10
-55 to 175
T
C
=100C
T
C
=25C
Continuous Drain
Current
G
Maximum
Units
Parameter
T
C
=25C
T
C
=100C
I
D
10
W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
25
Gate-Source Voltage
Drain-Source Voltage
75
Pulsed Drain Current
C
Power Dissipation
B
Maximum Junction-to-Case
B
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
Steady-State
C/W
AOU404
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 75V
I
D
= 10 A (V
GS
= 20V)
R
DS(ON)
< 130 m
(V
GS
= 20V) @ 5A
R
DS(ON)
< 140 m
(V
GS
= 10V)
R
DS(ON)
< 165 m
(V
GS
= 4.5V)
General Description
The AOU404 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU404 is Pb-free (meets ROHS & Sony
259 specifications). AOU404L is a Green Product
ordering option. AOU404 and AOU404L are
electrically identical.
G
D
S
Top View
Drain Connected
to Tab
TO-251
G D S
Alpha & Omega Semiconductor, Ltd.
AOU404
Symbol
Min
Typ
Max
Units
BV
DSS
75
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
2.4
3
V
I
D(ON)
20
A
100
130
T
J
=125C
180
220
105
140
m
120
165
m
g
FS
9
S
V
SD
0.79
1
V
I
S
10
A
C
iss
293
350
pF
C
oss
51
pF
C
rss
20
pF
R
g
2.2
3
Q
g
(10V)
5.2
6.5
nC
Q
g
(4.5V)
2.46
3.5
nC
Q
gs
1
nC
Q
gd
1.34
nC
t
D(on)
4.6
ns
t
r
2.3
ns
t
D(off)
14.7
ns
t
f
1.7
ns
t
rr
25
30
ns
Q
rr
27
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
.
Body Diode Reverse Recovery Charge I
F
=5A, dI/dt=100A/
s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=37.5V, R
L
=7.5
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=37.5V, I
D
=5A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
m
V
GS
=10V, I
D
=5A
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=10A
V
GS
=4.5V, I
D
=2A
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
,
I
D
=250
A
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=10mA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=20V, I
D
=5A
Reverse Transfer Capacitance
I
F
=5A, dI/dt=100A/
s
V
GS
=0V, V
DS
=30V, f=1MHz
SWITCHING PARAMETERS
A: The value of R
JA
is measured with the device in a still air environment with T
A
=25C.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=175C.
G. The maximum current rating is limited by bond-wires.
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
AOU404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
2
2.5
3
3.5
4
4.5
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
80
100
120
140
160
180
200
220
0
2
4
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(m
)
V
GS
=20V
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
Norm
al
i
z
ed On-Resi
stance
V
GS
=4.5V, 2A
V
GS
=10V, 5A
V
GS
=20V, 5A
60
100
140
180
220
260
300
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=5A
25C
125C
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=4V
6V
7V
10V
4.5V
5V
Alpha & Omega Semiconductor, Ltd.
AOU404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
2
4
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
50
100
150
200
250
300
350
400
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capaci
tance (pF)
C
iss
0
40
80
120
160
200
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
Norm
al
i
z
ed Transi
ent
Therm
al
Resi
stance
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175C, T
A
=25C
V
DS
=37.5V
I
D
=5A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
JC
.R
JC
R
JC
=7.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
AOU404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
12
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A),
P
eak Aval
anche Current
0
5
10
15
20
25
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
o
wer D
i
ssi
pat
i
on (
W
)
0
2
4
6
8
10
12
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
C
u
rrent
rat
i
ng I
D
(A)
DD
D
A
V
BV
I
L
t
-
=
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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