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Электронный компонент: 1N4386

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
V
BR
I
R
= 10
A
250
V
C
T
V
R
= 6.0 V f = 1.0 MHz
20
50
pF
R
S
V
R
= 6.0 V f = 50 MHz
0.7
Ohms
P
OUT(X3)
P
IN
= 30 W F
IN
= 150 MHz
15
W
SILICON MULTIPLIER VARACTOR DIODE
1N4386
DESCRIPTION:
The
1N4396
is a High Power Silicon
Multiplier Varactor Diode.
MAXIMUM RATINGS
I
F
200 mA
V
R
250 V
P
DISS
20 W @ T
C
= 25
O
C
T
J
-65
O
C to +150
O
C
T
STG
-65
O
C to +175
O
C



JC
5.0
O
C/W
PACKAGE STYLE DO- 4
1 = Anode
2 = Cathode