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Электронный компонент: 1N53

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL
MAXIM
UNITS
NF
F = 9375 MHz P
lo
= 1.0 mW NF
Iif
= 1.5 dB
R
L
= 100
I
F
= 30 MHz
13.1
dB
V
SWR
1.6
Z
IF
R
L
= 100
f = 1000 Hz
400
800
Test
Frequency
F = 9375 MHz P
lo
= 1.0 mW NF
Iif
= 1.5 dB
R
L
= 100
I
F
= 30 MHz
35 GHz
SILICON MIXER DIODE
1N53
DESCRIPTION:
The
ASI 1N53
is a Silicon Mixer
Diode Designed for low noise
performance in
Ka-Band Applications Operating up to
35 GHz.
FEATURES:
Low Noise Fugure
Wider Bandwith than cartridge
diodes inX Band
PACKAGE STYLE DO- 36