A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
NONE
SYMBOL TEST
CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
BV
CEO
I
C
= 5.0 mA
30
V
BV
CBO
I
C
= 100
A 40
V
BV
EBO
I
E
= 100
A 3.5
V
I
CEO
V
CE
= 20 V
50
A
I
CBO
V
CB
= 15 V
10
A
h
FE
V
CE
= 15 V I
C
= 50 mA
25
300
---
V
CE(SAT)
I
C
= 100 mA I
B
= 10 mA
0.2
V
V
BE(SAT)
I
C
= 100 mA I
B
= 10 mA
1.0
V
f
t
V
CE
= 15 V I
C
= 25 mA
f = 200 MHz
I
C
= 50 mA
f = 200 MHz
I
C
= 100 mA f = 200 MHz
1000
120
1000
2400
MHz
C
cb
V
CB
= 30 V
f = 100 KHz
1.0
3.5
pF
C
eb
V
CB
= 0.5 V
f = 100 KHz
15
pF
h
fe
V
CE
= 15 V
I
C
= 50 mA f = 1.0 KHz
25
350
---
r
b'Cc
V
CE
= 15 V
I
C
= 50 mA f = 31.8 MHz
2.0
20
pS
N
F
V
CE
= 15 V
I
C
= 50 mA f = 200 MHz
8.0
dB
G
pe
V
CC
= 15 V I
C
= 50 mA f = 200 MHz
7.0
dB
I
M
V
CC
= 15 V I
C
= 50 mA V
out
= +50 dbmV
-50
dB
X
M
V
CC
= 15 V I
C
= 50 mA V
out
= +50 dbmV
-45
dB
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N5943
DESCRIPTION:
The
2N5943
is a High Frequency
Transistor for General Purpose
Amplifier Applications
.
MAXIMUM RATINGS
I
C
400 mA
V
CE
30 V
P
DISS
1.0 W @ T
A
= 25
O
C
3.5 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
JC
125
O
C/W
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR
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