A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/2
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 10 mA
25
V
BV
CBO
I
C
= 10 mA
45
V
BV
EBO
I
E
= 1.0 mA
3.0
V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
20
200
---
C
OB
V
CB
= 15 V
f = 1.0 MHz
3.0
pF
P
G
P
1dB
V
CE
= 15 V I
C
= 100 mA P
OUT
= 0.5 W
f = 1000 MHz
13
+27
+29
dB
dBm
NPN SILICON RF POWER TRANSISTOR
2SC1251
DESCRIPTION:
The
2SC1251
is a Common Emitter
Device Designed for High Linearity
Class A Amplifiers up to 2.0 GHz.
FEATURES INCLUDE:
Direct Replacement for NE74020
High Gain - 10 dB min. @ 1.0 GHz
Gold Metalization
MAXIMUM RATINGS
I
C
300 mA
V
CB
45 V
P
DISS
5.3W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
JC
33
O
C/W
PACKAGE STYLE .204 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 2/2
TVU005B
Specifications are subject to change without notice.
S - PARAMETERS
V
CE
= 20 Volts, I
D
= 150 mA
FREQ.
S11
S21
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.735
190
13.65
115
0.025
30
0.364
280
200
0.840
188
8.15
100
0.025
30
0.275
240
300
0.860
181
5.75
90
0.025
30
0.280
240
400
0.857
178
4.25
80
0.030
30
0.285
230
500
0.855
173
3.50
70
0.035
35
0.300
225
600
0.850
170
2.80
66
0.035
35
0.310
220
700
0.850
168
2.45
60
0.040
35
0.320
215
800
0.850
165
2.20
55
0.045
40
0.330
210
900
0.855
163
2.00
50
0.050
45
0.340
215
1,000
0.860
161
1.75
45
0.055
45
0.350
215
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