A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL TEST
CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
BV
CEO
I
C
= 1.0 mA
16
V
BV
CBO
I
C
= 100
A
25 V
BV
EBO
I
E
= 100
A
1.5 V
I
CBO
V
CB
= 15 V
1.0
A
I
EBO
V
EB
= 1.0 V
4.0
A
h
FE
V
CE
= 8.0 V I
C
= 200 mA
20
200
---
C
OB
V
CB
= 10 V f = 1.0 MHz
2.9
4.0
pF
S21
2
V
CC
= 8.0 V I
C
= 200 mA f = 1.0 GHz
3.5
dB
P
OSC
V
CE
= 12 V I
C
= 200 mA f = 7.5 GHz
630
mW
NPN SILICON HIGH FREQUENCY TRANSISTOR
2SC2951
DESCRIPTION:
The ASI
2SC2951
is a High
Frequency Transistor Designed for
General Purpose Oscillator
Applications up to 10 GHz.
FEATURES:
P
OSC
= 630 mW Typical at 7.5 GHz
OmnigoldTM Metallization System
MAXIMUM RATINGS
I
C
440 mA
V
CE
16 V
V
CB
25 V
P
DISS
9.7 W @ T
C
= 25 C
T
J
-65 to +200 C
T
STG
-65 to +200 C
JC
18 C/W
PACKAGE STYLE .200 2L FLG
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