A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
V
B
I
R
= 10
A
70 V
C
T
V
R
= 20 V
f = 1.0 MHz
0.45
pF
R
S
I
F
= 20 mA
f = 100 MHz
1.0
t
rr
I
F
= 20 mA
V
R
= 10 V
10
nS
FAST SWITCHING SILICON PIN DIODE
5082-3306
DESCRIPTION:
The
ASI 5082-3306
is a passivated
silicon PIN diode of mesa construction.
Designed for controlling and
processing microwave signals up to Ku
band.
FEATURES:
50 W Peak Pulse Power
Switching time < 5 nS
Heat Sink Cathode
MAXIMUM RATINGS
P
DISS
0.25 W @ T
C
= 25 C
T
J
-65 C to +150 C
T
STG
-65 C to +150 C
PACKAGE STYLE 51
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