A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BV
CEO
I
C
= 5.0 mA
30
V
BV
CER
I
C
= 5.0 mA R
BE
= 10
55 V
BV
EBO
I
C
= 100
A
3.5 V
I
CEX
V
CE
= 55 V V
BE
= -1.5 V
V
CE
= 30 V V
BE
= -1.5 V T
C
= 200
O
C
100
500
A
I
CEO
V
CE
= 28 V
20
A
I
EBO
V
EB
= 3.5 V
100
A
h
FE
V
CE
= 5.0 V I
C
= 50 mA
I
C
= 360 mA
10
5.0
200 ---
V
CE(SAT)
I
C
= 100 mA I
B
= 20 mA
1.0
V
f
t
V
CE
= 15 V I
C
= 50 mA
f = 200 MHz
500
MHz
C
OB
V
CB
= 28 V
f = 1.0 MHz
3.0
pF
G
PE
c
V
CC
= 28 V
P
out
= 1.0 W f = 400 MHz
10
45
dB
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N3866
DESCRIPTION:
The
ASI 2N3866
is a High
Frequency Transistor Designed for
Amplifier and Oscillator Applications.
MAXIMUM RATINGS
I
C
400 mA
V
CE
30 V
P
DISS
5.0 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
JC
35
O
C/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
PDF 
ZIP