A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
I
CBO
V
CB
= 8 V
100
nA
I
EBO
V
EB
= 1.0 V
1.0
A
h
FE
V
CE
= 8.0 V I
C
= 7.0 mA
50
250
---
C
CB
V
CB
= 10 V
0.6
pF
f
t
V
CE
= 10 V I
C
= 20 mA f = 1.0 GHz
8.0
8.5
GHz
S21
2
V
CE
= 8 V I
C
= 20 mA f = 2.0 GHz
10
11
dB
NF
GA
V
CE
= 8 V I
C
= 10 mA f = 2.0 GHz
10
1.6
11
2.5
dB
NPN SILICON LOW NOISE RF TRANSISTOR
ALN64535
DESCRIPTION:
The
ALN64535
is a Common Emitter
Device Designed for Low Noise Class
A Amplifier Applications up to 4.0 GHz.
FEATURES INCLUDE:
N
F
= 1.6 dB Typical @ 2 GHz
S21
2
= 11 dB Typical @ 2 GHz
Hermetic Ceramic Package
MAXIMUM RATINGS
I
C
60 mA
V
CBO
25 V
V
CEO
12 V
V
EBO
1.5 V
P
DISS
300 mW @ T
A
75
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
JC
85
O
C/W
PACKAGE STYLE SS35
1 = Base 2 & 4 = Emitter 3 = Collector
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