A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
V
B
I
R
= 10
A
100
V
C
J
V
R
= 6.0 V f = 1.0 MHz
0.05
pF
R
S
I
F
= 20 mA f = 1.0 GHz
I
F
= 100 mA
2.6
2.0
Ohms
T
L
I
F
= 10 mA I
R
= 6.0 mA
100
nS
T
S
10%-90% / 90%-10%
10
nS
C
P
f = 1.0 MHz
0.15
pF
L
S
2.5
nH
SILICON PIN DIODE
AP1000A
DESCRIPTION:
The
AP1000A
is a Diffused Epitaxial
Silicon PIN Diode.
MAXIMUM RATINGS
I
C
100mA
V
CE
100 V
P
DISS
500 mW @ T
C
= 25
O
C
T
J
-65
O
C to +150
O
C
T
STG
-65
O
C to +175
O
C
JC
50
O
C/W
T
SOLD
5.0 Sec./200
O
C
PACKAGE STYLE 15
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