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Электронный компонент: AP1000B-00

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
A
= 25
O
C
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
V
BR
I
R
= 10
A
100
V
C
J
V
R
= 10 V f = 1.0 MHz
0.10
pF
R
S
I
F
= 20 mA f = 100 MHz
1.0
2.0
Ohms
T
L
I
F
= 10 mA I
R
= 6.0 mA
100
nS
t
rr
I
F
= 20 mA V
R
= 10 V
10
nS
SILICON PIN DIODE CHIP
AP1000B-00
PACKAGE STYLE CHP152
0.015"0.002" SQ.
Anode = Pad
Cathode = Bottom Side
DESCRIPTION:
The
AP1000B-00
is a Planar Silicon
PIN Diode Chip Designed for High
Speed Switch and Limiter Applications
Up to 18 GHz.
FEATURES INCLUDE:



Low Capacitance - 0.10 pF Typical



Fast Switching - 10 nS Typical



SiO
2
Passivation
MAXIMUM RATINGS
I
F
100 mA
V
R
100 V
P
DISS
0.5 W @ T
A
= 25
O
C
T
J
-65
O
C to +150
O
C
T
STG
-65
O
C to +150
O
C



JC
50
O
C/W
0.002" 0.001"