A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 1.0 mA
16
V
BV
CBO
I
C
= 100
A
25
V
I
EBO
I
EB
= 1.0 V
2.0
A
I
CBO
V
CB
= 15 V
500
A
h
FE
V
CE
= 8.0 V I
C
= 100 mA
20
200
---
C
OB
V
CB
= 10 V f = 1.0 MHz
1.5
pF
C
V
CC
= 12 V P
OUT
= 0.3 W f = 7.5 GHz
22
%
|
|
S21C
|
|
2
V
CE
= 8.0 V I
C
= 100 mA f = 1.0 GHz
4.0
dB
P
OSC
V
CC
= 12 V I
C
= 120 mA f = 7.5 GHz
320
mW
NPN SILICON RF POWER TRANSISTOR
OSC-0.3C
DESCRIPTION:
The
ASI OSC-0.3C
is Designed for
FEATURES:
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
225 mA
V
CB
25 V
P
DISS
5.0 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
JC
30
O
C/W
PACKAGE STYLE .138 2L FLG
ORDER CODE: ASI10636
MINIMUM
inches / mm
.025 / 0.635
B
C
D
E
F
A
MAXIMUM
inches / mm
DIM
F
E
C
B
A
D
.138 / 3.505
.275 / 6.985
.375 / 9.525
.031 / 0.787
.062 / 1.575
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