A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
V
(BR)DSS
V
GS
= 0 V I
DS
= 100 mA
65
---
---
V
I
DSS
V
GS
= 0 V V
DS
= 28 V
---
---
0.5
mA
I
GSS
V
GS
= 20 V V
DS
= 0 V
---
---
1.0
A
V
GS
V
DS
= 10 V I
D
= 100 mA
1.0
---
5.0
V
V
DS
V
GS
= 10 V I
D
= 10 A
---
---
1.5
V
G
FS
V
DS
= 10 V I
D
= 5 A
3.5
---
---
mho
C
ISS
C
OSS
C
RSS
V
GS
= 28 V V
DS
= 0 V F = 1.0 MHz
---
375
188
26
---
pF
P
IN
G
PS
V
DD
= 28 V I
DQ
= 250 mA P
OUT
= 150 W
(PEP)
f = 175 MHz
50
10
15
W
dB
%
NPN SILICON RF POWER TRANSISTOR
HFT150-28
DESCRIPTION:
The
ASI HFT150-28
is Designed for
FEATURES:
P
G
= 16 dB min. at 150 W/30 MHz
IMD
3
= -28 dBc max. at 150 W
(PEP)
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
D
16 A
V
(BR)DSS
65 V
V
GS
40 V
P
DISS
300 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
JC
0.60
O
C/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10616
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
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