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Электронный компонент: ASI10679

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 50 mA
16
V
BV
CES
I
C
= 50 mA R
BE
= 10
36
V
BV
EBO
I
E
= 1.0 mA
4.0
V
I
CBO
V
CB
= 15 V
1.0
mA
h
FE
V
CE
= 5.0 V I
C
= 50 mA
20
200
---
C
ob
V
CB
= 12.5 V f = 1.0 MHz
10
pF
P
G
C
V
CE
= 12.5 V P
OUT
= 2.0 W f = 470 MHz
8.0
55
dB
%
NPN SILICON RF POWER TRANSISTOR
ULBM2TE
DESCRIPTION:
The
ASI ULBM2TE
is Designed for

FEATURES:
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
0.40 A
V
CBO
36 V
V
CEO
16 V
V
EBO
4.0 V
P
DISS
5 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C

JC
35
O
C/W
PACKAGE STYLE TO-39GE















ORDER CODE: ASI10679
D
A
45
C
B
E
G
H
.200 / 5.080
MINIMUM
inches / mm
.029 / 0.740
.355 / 9.020
.028 / 0.720
.315 / 8.010
.165 / 4.200
.500 / 12.700
.016 / 0.410
C
D
E
F
G
H
B
A
.020 / 0.508
.335 / 8.500
.180 / 4.570
.370 / 9.370
MAXIMUM
.034 / 0.860
inches / mm
.045 / 1.140
.750 / 19.050
F
DIM