A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BV
CEO
I
C
= 50 mA
20
V
BV
CER
I
C
= 5.0 mA R
BE
= 10
40 V
BV
EBO
I
C
= 100
A
3.5 V
I
CEX
V
CE
= 40 V V
BE
= -1.5 V
0.1
mA
I
EBO
V
EB
= 20 V
0.1
mA
h
FE
V
CE
= 5.0 V I
C
= 100 mA
I
C
= 380 mA
10
5.0
200
---
V
CE(SAT)
I
C
= 100 mA I
B
= 20 mA
0.5
V
f
t
V
CE
= 15 V I
C
= 50 mA
f = 200 MHz
500
MHz
C
OB
V
CB
= 12 V
f = 1.0 MHz
4.0
pF
P
in
V
CC
= 12 V
f = 175 MHz
P
out
= 1.0 W
35
75
mW
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N4427
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR
DESCRIPTION:
The
ASI 2N4427
is a High Frequency
Transistor Designed for Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
I
C
400 mA
V
CE
20 V
P
DISS
3.5 W @ T
C
= 25 C
T
J
-65 C to +200 C
T
STG
-65 C to +200 C
JC
50 C/W
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