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Электронный компонент: ASI30264

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
V
BR
I
R
= 10
A
4.0
V
V
F
I
F
= 1.0 mA
500
mV
R
D
I
F
= 5.0 mA
18
C
T
V
R
= 0 V f = 1.0 MHz
0.15
pF
NF
NF
Z
IF
Z
IF
I
F
= 30 MHz f = 9.375 GHz
P
LO
= 0 dBm
N
IF
= 1.5 dB DC Load = 0
200
7.2
0.3
400
25
dB
dB
BEAM LEAD SCHOTTKY DIODE
BATCH MATCHED
HSCH5315
DESCRIPTION:
The
HSCH5315
is a Medium Barrier
Beam Lead Schottky Diode Designed
for X-Band Mixer Applications that is
Batch Matched for NF and ZIF.
MAXIMUM RATINGS
I
F
25 mA
V
R
4.0 V
P
DISS
300 mW @ T
A
= 25
O
C
T
J
-65
O
C to +175
O
C
T
STG
-65
O
C to +200
O
C
PACKAGE STYLE BL1
ORDER CODE: ASI30264