A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change witout notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV
CEO
I
C
= 50 mA
35
V
BV
CES
I
C
= 10 mA
65
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CES
V
CE
= 36 V
4.0
mA
h
FE
V
CE
= 5.0 V I
C
= 1.25 A
10
100
---
C
OB
V
CB
= 28 V
f = 1.0 MHz
45
pF
G
P
f
T
V
CE
= 28 V
f = 175 MHz
V
CB
= 28 V I
E
= 200 mA f = 100 MHz
9.0
625
---
dB
MHz
NPN SILICON RF POWER TRANSISTOR
BLY93C
DESCRIPTION:
The
ASI BLY93C
is Designed for
Class C, 28 V High Band Applications
up to 175 MHz.
FEATURES:
Common Emitter
P
G
= 9.0 dB at 25 W/175 MHz
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
3.0 A
V
CBO
65 V
V
CEO
35 V
V
EBO
4.0 V
P
DISS
70 W @ T
C
= 25 C
T
J
-65 C to +200 C
T
STG
-65 C to +150 C
JC
2.5 C/W
PACKAGE STYLE .380 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
B
E
E
C
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